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PDF FMMT560 Data sheet ( Hoja de datos )
| Número de pieza | FMMT560 | |
| Descripción | PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
FMMT560
ISSUE 1 – NOVEMBER 1998
FEATURES
* Excellent hFE characterisristics up to IC=50mA
* Low Saturation voltages
PARTMARKING DETAIL – 560
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Peak Pulse Current
ICM
Continuous Collector Current
IC
Power Dissipation
Ptot
Operating and Storage Temperature Range
Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. MAX.
-500
-500
-5
-500
-150
500
-55 to +150
V
V
V
mA
mA
mW
°C
UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO -500
V IC=-100µA
Collector-Emitter Breakdown
Voltage
VBR(CEO) -500
V IC=-10mA*
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
V(BR)EBO
ICBO ; ICES
IEBO
VCE(sat)
-5
VBE(sat)
-100
-100
-0.2
-0.5
-0.9
V
nA
nA
V
V
V
IE=-100µA
VCB=-500V; VCE=-500V
VEB=-5V
IC=-20mA, IB=-2mA *
IC=-50mA, IB=-10mA *
IC=-50mA, IB=-10mA *
Base-Emitter Turn On Voltage
Static Forward Current Transfer
Ratio
VBE(on)
hFE
Transition Frequency
fT
100
80
15 typ
60
-0.9
300
300
V
MHz
IC=-50mA, VCE=-10V *
IC=-1mA, VCE=-10V
IC=-50mA, VCE=-10V *
IC=-100mA, VCE =-10V*
VCE=-20V, IC=-10mA,
f=50MHz
Output Capacitance
Cobo
8 pF
Switching times
ton 110 typ.
toff 1.5 typ.
ns
µs
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
VCB=-20V, f=1MHz
VCE=-100V, IC=-50mA,
IB1=-5mA, IB2=10mA
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet FMMT560.PDF ] | |
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