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PDF FMMT494 Data sheet ( Hoja de datos )
| Número de pieza | FMMT494 | |
| Descripción | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de FMMT494 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - NOVEMBER 1995 7
PARTMARKING DETAIL 494
FMMT494
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Peak Pulse Current
ICM
Base Current
IB
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN.
MAX.
140
120
5
1
2
200
500
-55 to +150
V
V
V
A
A
mA
mW
°C
UNIT CONDITIONS.
Breakdown Voltages
V(BR)CBO 140
V
VCEO(sus)
V(BR)EBO
120
5
V
V
Collector Cut-Off Currents
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
ICBO
ICES
IEBO
VCE(sat)
100 nA
100 nA
100 nA
0.2 V
0.3 V
Base-Emitter
Saturation Voltage
VBE(sat)
1.1 V
IC=100µA
IC=10mA*
IE=100µA
VCB=120V
VCE=120V
VEB=4V
IC=250mA, IB=25mA*
IC=500mA, IB=50mA*
IC=500mA, IB=50mA*
Base-Emitter
Turn On Voltage
VBE(on)
1.0 V
IC=500mA, VCE=10V*
Static Forward Current
Transfer Ratio
Transition Frequency
hFE 100
100 300
60
20
IC=1mA, VCE=10V*
IC=250mA, VCE=10V*
IC=500mA, VCE=10V*
IC=1A, VCE=10V*
fT 100
MHz
IC=50mA, VCE=10V
f=100MHz
Collector-Base
Breakdown Voltage
Cobo
10 pF VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
3 - 121
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet FMMT494.PDF ] | |
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