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PDF FMMT451 Data sheet ( Hoja de datos )
| Número de pieza | FMMT451 | |
| Descripción | NPN SILICON PLANAR HIGH PERFROMANCE TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT23 NPN SILICON PLANAR
HIGH PERFROMANCE TRANSISTOR
ISSUE 3 - OCTOBER 1995
7
FEATURES
* Low equivalent on-resistance; RCE(sat) 400mΩ at 1A
* 1 Amp continuous current
* Ptot= 500 mW
COMPLEMENTARY TYPE FMMT551
PARTMARKING DETAIL 451
FMMT451
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Peak Pulse Current
ICM
Continuous Collector Current
IC
Base Current
IB
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. MAX. UNIT
VALUE
80
60
5
2
1
200
500
-55 to +150
CONDITIONS.
UNIT
V
V
V
A
A
mA
mW
°C
Collector-Base
Breakdown Voltage
V(BR)CBO 80
V IC=100µA
Collector-Emitter
Sustaining Voltage
VCEO(sus) 60
V IC=10mA*
Emitter-Base Breakdown V(BR)EBO 5
Voltage
V IE=100µA
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
ICBO
IEBO
VCE(sat)
0.1
0.1
0.35
µA
µA
V
VCB=60V
VEB=4V
IC=150mA, IB=15mA*
Base-Emitter
Saturation Voltage
VBE(sat)
1.1 V
IC=150mA, IB=15mA*
Static Forward Current
Transfer Ratio
Transition
Frequency
hFE
fT
50 150
10
IC=150mA, VCE=10V*
IC=1A, VCE=10V*
150 MHz IC=50mA, VCE=10V
f=100MHz
Output Capacitance
Cobo
15 pF VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
3 - 108
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet FMMT451.PDF ] | |
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