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PDF FMMT413 Data sheet ( Hoja de datos )
| Número de pieza | FMMT413 | |
| Descripción | NPN SILICON PLANAR AVALANCHE TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT23 NPN SILICON PLANAR
AVALANCHE TRANSISTOR
PROVISIONAL DATASHEET ISSUE 2 MARCH 1996
FEATURES
* Avalanche mode operation
* 50A Peak avalanche current
* Low inductance packaging
APPLICATIONS
* Laser LED drivers
* Fast edge generation
* High speed pulse generators
PARTMARKING DETAIL - 413
FMMT413
E
C
B
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
150 V
Collector-Emitter Voltage
VCEO
50 V
Emitter-Base Voltage
VEBO
6V
Continuous Collector Current
IC 100 mA
Peak Collector Current (25ns Pulse Width)
ICM
50 A
Power Dissipation
Ptot 330 mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
V(BR)CES
150
V IC=100µA
Collector-Emitter
Breakdown Voltage
VCEO(sus) 50
V IC=10mA
Emitter-Base
Breakdown Voltage
V(BR)EBO
6
V IE=100µA
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
ICBO
IEBO
VCE(sat)
0.1 µA
0.1 µA
0.15 V
VCB=120V
VEB=4V
IC=10mA, IB=1mA
Base-Emitter
Saturation Voltage
VBE(sat)
0.8 V
IC=10mA, IB=1mA
Current in Second
Breakdown (Pulsed)
Static Forward Current
Transfer Ratio
IUSB
hFE
22
31
50
A VC=110V, CCE=4.7nF*
A VC=130V, CCE=4.7nF*
IC=10mA, VCE=10V
*Measured within a circuit possessing an approximate loop inductance of 12nH. The I(USB)monitor
circuitry reflects 0.15 Ohm into the Collector-Emitter Discharge Loop
The FMMT413 device is a development product. Samples availability and release to production
scheduled for June 1996
3 - 102
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet FMMT413.PDF ] | |
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