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PDF FMG1G75US60H Data sheet ( Hoja de datos )
| Número de pieza | FMG1G75US60H | |
| Descripción | Molding Type Module | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FMG1G75US60H
Molding Type Module
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power
modules provide low conduction and switching losses as
well as short circuit ruggedness. They are designed for
applications such as motor control, uninterrupted power
supplies (UPS) and general inverters where short circuit
ruggedness is a required feature.
Features
• UL Certified No. E209204
• Short Circuit rated 10us @ TC = 100°C, VGE = 15V
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 75A
• High Input Impedance
• Fast & Soft Anti-Parallel FWD
Application
• AC & DC Motor Controls
• General Purpose Inverters
• Robotics
• Servo Controls
• UPS
IGBT
Package Code : 7PM-GA
E1/C2
C1 E2
G1 E1
Internal Circuit Diagram
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
TSC
PD
TJ
Tstg
Viso
Mounting
Torque
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Curent
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Power Terminals Screw : M5
Mounting Screw : M5
@ TC = 25°C
@ TC = 100°C
@ TC = 100°C
@ TC = 25°C
@ AC 1minute
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
FMG1G75US60H
600
± 20
75
150
75
150
10
310
-40 to +150
-40 to +125
2500
2.0
2.0
Units
V
V
A
A
A
A
us
W
°C
°C
V
N.m
N.m
©2002 Fairchild Semiconductor Corporation
FMG1G75US60H Rev. A
1 page  
16000
14000
12000
10000
8000
6000
4000
2000
0
Cies
Common Emitter
V = 0V, f = 1MHz
GE
T = 25℃
C
Coes
Cres
1 10
Collector - Emitter Voltage, VCE [V]
Fig 7. Capacitance Characteristics
1000
Common Emitter
V = 300V, V = +/- 15V
CC GE
I = 75A
C
TC = 250C
TC = 1250C
100
Toff
Tf
1 10
Gate
Resistance,
R
g
[Ω]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Common Emitter
VCC = 300V, VGE = +/- 15V
R
G
=
3.3Ω
T = 250C
C
TC = 1250C
100
Ton
Tr
10
20 40 60 80 100 120 140
Collector Current, I [A]
C
Fig 11. Turn-On Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
1000
Common Emitter
VCC = 300V, VGE = +/- 15V
I = 75A
C
T = 250C
C
TC = 1250C
100
Ton
Tr
10
1
10
Gate Resistance, RG [Ω]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
10000
Common Emitter
VCC = 300V, VGE = +/- 15V
I = 75A
C
T = 250C
C
T = 1250C
C
Eon
Eoff
1000
1 10
Gate
Resistance,
R
G
[Ω]
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
VCC = 300V, VGE = +/- 15V
R
G
=
3.3Ω
T = 250C
C
T = 1250C
C
100
Toff
Tf
Toff
Tf
20 40 60 80 100 120 140
Collector Current, IC [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
FMG1G75US60H Rev. A
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FMG1G75US60H.PDF ] | |
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