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PDF FMG1G50US60 Data sheet ( Hoja de datos )

Número de pieza FMG1G50US60
Descripción Molding Type Module
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FMG1G50US60 Hoja de datos, Descripción, Manual

FMG1G50US60H
Molding Type Module
IGBT
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power
modules provide low conduction and switching losses as
well as short circuit ruggedness. They are designed for
applications such as motor control, uninterrupted power
supplies (UPS) and general inverters where short circuit
ruggedness is a required feature.
Features
• UL Certified No. E209204
• Short Circuit rated 10us @ TC = 100°C, VGE = 15V
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 50A
• High Input Impedance
• Fast & Soft Anti-Parallel FWD
Application
• AC & DC Motor Controls
• General Purpose Inverters
• Robotics
• Servo Controls
• UPS
Package Code : 7PM-GA
E1/C2
C1 E2
G1 E1
Internal Circuit Diagram
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
TSC
PD
TJ
Tstg
Viso
Mounting
Torque
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Power Terminals Screw : M5
Mounting Screw : M5
@ TC = 25°C
@ TC = 100°C
@ TC = 100°C
@ TC = 25°C
@ AC 1minute
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
FMG1G50US60H
600
± 20
50
100
50
100
10
250
-40 to +150
-40 to +125
2500
2.0
2.0
Units
V
V
A
A
A
A
us
W
°C
°C
V
N.m
N.m
©2002 Fairchild Semiconductor Corporation
FMG1G50US60H Rev. A

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FMG1G50US60 pdf
7000
6000
5000
4000
Cies
Common Emitter
V = 0V, f = 1MHz
GE
TC = 25
3000
2000
1000
Coes
Cres
0
1
10
Collector - Emitter Voltage, VCE [V]
Fig 7. Capacitance Characteristics
1000
Common Emitter
V = 300V, V = +/- 15V
CC GE
IC = 50A
TC = 250C
TC = 1250C
100
Toff
Tf
1 10
Gate
Resistance,
R
g
[]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Common Emitter
V = 300V, V = +/- 15V
CC GE
RG = 5.9
TC = 250C
T = 1250C
C
100
Ton
Tr
10
10 20 30 40 50 60 70 80 90 100
Collector Current, I [A]
C
Fig 11. Turn-On Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
1000
Common Emitter
V = 300V, V = +/- 15V
CC GE
IC = 50A
TC = 250C
T = 1250C
C
100
Ton
Tr
10
1
10
Gate Resistance, RG []
Fig 8. Turn-On Characteristics vs.
Gate Resistance
10000
Common Emitter
V = 300V, V = +/- 15V
CC GE
IC = 50A
TC = 250C
TC = 1250C
1000
Eoff
Eon
Eoff
1 10
Gate
Resistance,
R
G
[]
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
VCC = 300V, VGE = +/- 15V
R
G
=
5.9
T = 250C
C
T = 1250C
C
100
Toff
Tf
Toff
Tf
10 20 30 40 50 60 70 80 90 100
Collector Current, IC [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
FMG1G50US60H Rev. A

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