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PDF M27W801-200F6TR Data sheet ( Hoja de datos )

Número de pieza M27W801-200F6TR
Descripción 8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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M27W801
8 Mbit (1Mb x8) Low Voltage UV EPROM and OTP EPROM
s 2.7V to 3.6V SUPPLY VOLTAGE in READ
OPERATION
s ACCESS TIME:
– 80ns at VCC = 3.0V to 3.6V
– 100ns at VCC = 2.7V to 3.6V
s PIN COMPATIBLE with M27C801
s LOW POWER CONSUMPTION:
– 15µA max Standby Current
– 15mA max Active Current at 5MHz
s PROGRAMMING TIME 50µs/byte
s HIGH RELIABILITY CMOS TECHNOLOGY
– 2,000V ESD Protection
– 200mA Latchup Protection Immunity
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: 42h
32
1
FDIP32W (F)
32
1
PDIP32 (B)
PLCC32 (K)
TSOP32 (N)
8 x 20 mm
Figure 1. Logic Diagram
DESCRIPTION
The M27W801 is a low voltage 8 Mbit EPROM of-
fered in the two ranges UV (ultra violet erase) and
OTP (one time programmable). It is ideally suited
for microprocessor systems requiring large data or
program storage and is organized as 1,048,576 by
8 bits.
The M27W801 operates in the read mode with a
supply voltage as low as 2.7V at –40 to 85°C tem-
perature range. The decrease in operating power
allows either a reduction of the size of the battery
or an increase in the time between battery re-
charges.
The FDIP32W (window ceramic frit-seal package)
has a transparent lids which allow the user to ex-
pose the chip to ultraviolet light to erase the bit pat-
tern. A new pattern can then be written to the
device by following the programming procedure.
For applications where the content is programmed
only one time and erasure is not required, the
M27W801 is offered in PDIP32, PLCC32 and
TSOP32 (8 x 20 mm) packages.
VCC
20
A0-A19
8
Q0-Q7
E
GVPP
M27W801
VSS
AI02363
April 2000
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M27W801-200F6TR pdf
M27W801
Table 7. Read Mode DC Characteristics (1)
(TA = –40 to 85 °C; VCC = 2.7V to 3.6V; VPP = VCC)
Symbol
Parameter
Test Condition
Min
ILI Input Leakage Current
ILO Output Leakage Current
ICC Supply Current
ICC1 Supply Current (Standby) TTL
0V VIN VCC
0V VOUT VCC
E = VIL, GVPP = VIL, IOUT = 0mA,
f = 5MHz, VCC 3.6V
E = VIH
ICC2 Supply Current (Standby) CMOS
IPP Program Current
VIL Input Low Voltage
E > VCC – 0.2V, VCC 3.6V
VPP = VCC
–0.6
VIH (2) Input High Voltage
0.7 VCC
VOL Output Low Voltage
IOL = 2.1mA
VOH Output High Voltage TTL
IOH = –1mA
3.6
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
2. Maximum DC voltage on Output is VCC +0.5V.
Max
±10
±10
15
1
15
10
0.2 VCC
VCC + 0.5
0.4
Unit
µA
µA
mA
mA
µA
µA
V
V
V
V
Two Line Output Control
Because EPROMs are usually used in larger
memory arrays, the product features a 2 line con-
trol function which accommodates the use of mul-
tiple memory connection. The two line control
function allows:
a. the lowest possible memory power dissipation,
b. complete assurance that output bus contention
will not occur.
For the most efficient use of these two control
lines, E should be decoded and used as the prima-
ry device selecting function, while G should be
made a common connection to all devices in the
array and connected to the READ line from the
system control bus. This ensures that all deselect-
ed memory devices are in their low power standby
mode and that the output pins are only active
when data is required from a particular memory
device.
System Considerations
The power switching characteristics of Advanced
CMOS EPROMs require careful decoupling of the
devices. The supply current, ICC, has three seg-
ments that are of interest to the system designer:
the standby current level, the active current level,
and transient current peaks that are produced by
the falling and rising edges of E. The magnitude of
the transient current peaks is dependent on the
capacitive and inductive loading of the device at
the output. The associated transient voltage peaks
can be suppressed by complying with the two line
output control and by properly selected decoupling
capacitors. It is recommended that a 0.1µF ceram-
ic capacitor be used on every device between VCC
and VSS. This should be a high frequency capaci-
tor of low inherent inductance and should be
placed as close to the device as possible. In addi-
tion, a 4.7µF bulk electrolytic capacitor should be
used between VCC and VSS for every eight devic-
es. The bulk capacitor should be located near the
power supply connection point. The purpose of the
bulk capacitor is to overcome the voltage drop
caused by the inductive effects of PCB traces.
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M27W801-200F6TR arduino
Table 12. Ordering Information Scheme
Example:
Device Type
M27
Supply Voltage
W = 2.7V to 3.6V
Device Function
801 = 8 Mbit (1Mb x8)
Speed
-100 (1,2) = 80 ns
-120 = 120 ns
Not For New Design (3)
-150 = 150 ns
-200 = 200 ns
Package
F = FDIP32W (4)
B = PDIP32
K = PLCC32
N = TSOP32: 8 x 20 mm (4)
Temperature Range
6 = –40 to 85 °C
Optio ns
TR = Tape & Reel Packing
M27W801
-80 K 6 TR
M27W801
Note: 1. High Speed, see AC Characteristics section for further information.
2. This speed also guarantees 80ns access time at VCC = 3.0V to 3.6V.
3. These speeds are replaced by the 120ns.
4. Packages option available on request. Please contact STMicroelectronics local Sales Office.
For a list of available options (Speed, Package, etc...) or for further information on any aspect of this de-
vice, please contact the STMicroelectronics Sales Office nearest to you.
Table 13. Revision History
Date
Revision Details
July 1999
First Issue
03/15/00
FDIP32W Package Dimension, L Max added (Table 14)
TSOP32 Package Dimension changed (Table 17)
0 to 70°C Temperature Range deleted
Programming Time changed
04/21/00
Read Mode AC Characteristics: tAVQV, tELQV, tGLQV, tEHQZ, tGHQZ changed (Table 8)
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