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PDF M27C800-150XK6TR Data sheet ( Hoja de datos )

Número de pieza M27C800-150XK6TR
Descripción 8 Mbit 1Mb x8 or 512Kb x16 UV EPROM and OTP EPROM
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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M27C800
8 Mbit (1Mb x8 or 512Kb x16) UV EPROM and OTP EPROM
s 5V ± 10% SUPPLY VOLTAGE in READ
OPERATION
s ACCESS TIME: 50ns
s BYTE-WIDE or WORD-WIDE
CONFIGURABLE
s 8 Mbit MASK ROM REPLACEMENT
s LOW POWER CONSUMPTION
– Active Current 70mA at 8MHz
– Stand-by Current 50µA
s PROGRAMMING VOLTAGE: 12.5V ± 0.25V
s PROGRAMMING TIME: 50µs/word
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: B2h
DESCRIPTION
The M27C800 is an 8 Mbit EPROM offered in the
two ranges UV (ultra violet erase) and OTP (one
time programmable). It is ideally suited for micro-
processor systems requiring large data or program
storage. It is organised as either 1 Mwords of 8 bit
or 512 Kwords of 16 bit. The pin-out is compatible
with the most common 8 Mbit Mask ROM.
The FDIP42W (window ceramic frit-seal package)
has a transparent lid which allows the user to ex-
pose the chip to ultraviolet light to erase the bit pat-
tern.
A new pattern can then be written rapidly to the de-
vice by following the programming procedure.
For applications where the content is programmed
only one time and erasure is not required, the
M27C800 is offered in PDIP42, PLCC44 and
SO44 packages.
42
1
FDIP42W (F)
42
1
PDIP42 (B)
PLCC44 (K)
44
1
SO44 (M)
Figure 1. Logic Diagram
VCC
19
A0-A18
E
G
BYTEVPP
M27C800
Q15A–1
15
Q0-Q14
VSS
AI01593
January 2000
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M27C800-150XK6TR pdf
Table 6. Capacitance (1) (TA = 25 °C, f = 1 MHz)
Symbol
Parameter
Input Capacitance (except BYTEVPP)
CIN
Input Capacitance (BYTEVPP)
COUT Output Capacitance
Note: 1. Sampled only, not 100% tested.
Test Condit ion
VIN = 0V
VIN = 0V
VOUT = 0V
M27C800
Min Max Unit
10 pF
120 pF
12 pF
Table 7. Read Mode DC Characteristics (1)
(TA = 0 to 70 °C or –40 to 85 °C; VCC = 5V ± 5% or 5V ± 10%; VPP = VCC)
Symbol
Parameter
Test Condition
Min
ILI Input Leakage Current
ILO Output Leakage Current
0V VIN VCC
0V VOUT VCC
ICC Supply Current
ICC1 Supply Current (Standby) TTL
ICC2 Supply Current (Standby) CMOS
IPP Program Current
E = VIL, G = VIL,
IOUT = 0mA, f = 8MHz
E = VIL, G = VIL,
IOUT = 0mA, f = 5MHz
E = VIH
E > VCC – 0.2V
VPP = VCC
VIL Input Low Voltage
–0.3
VIH (2) Input High Voltage
2
VOL Output Low Voltage
IOL = 2.1mA
VOH Output High Voltage TTL
IOH = –400µA
2.4
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
2. Maximum DC voltage on Output is VCC + 0.5V.
Max
±1
±10
70
Unit
µA
µA
mA
50
1
50
10
0.8
VCC + 1
0.4
mA
mA
µA
µA
V
V
V
V
Standby Mode
The M27C800 has a standby mode which reduces
the supply current from 50mA to 100µA. The
M27C800 is placed in the standby mode by apply-
ing a CMOS high signal to the E input. When in the
standby mode, the outputs are in a high imped-
ance state, independent of the G input.
5/17

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M27C800-150XK6TR arduino
M27C800
On-Board Programming
The M27C800 can be directly programmed in the
application circuit. See the relevant Application
Note AN620.
Electronic Signature
The Electronic Signature (ES) mode allows the
reading out of a binary code from an EPROM that
will identify its manufacturer and type. This mode
is intended for use by programming equipment to
automatically match the device to be programmed
with its corresponding programming algorithm.
The ES mode is functional in the 25°C ± 5°C am-
bient temperature range that is required when pro-
gramming the M27C800. To activate the ES
mode, the programming equipment must force
11.5V to 12.5V on address line A9 of the
M27C800, with VPP = VCC = 5V. Two identifier
bytes may then be sequenced from the device out-
puts by toggling address line A0 from VIL to VIH. All
other address lines must be held at VIL during
Electronic Signature mode.
Byte 0 (A0 = VIL) represents the manufacturer
code and byte 1 (A0 = VIH) the device identifier
code. For the STMicroelectronics M27C800, these
two identifier bytes are given in Table 4 and can be
read-out on outputs Q7 to Q0.
ERASURE OPERATION (applies to UV EPROM)
The erasure characteristics of the M27C800 is
such that erasure begins when the cells are ex-
posed to light with wavelengths shorter than ap-
proximately 4000 Å. It should be noted that
sunlight and some type of fluorescent lamps have
wavelengths in the 3000-4000 Å range. Research
shows that constant exposure to room level fluo-
rescent lighting could erase a typical M27C800 in
about 3 years, while it would take approximately 1
week to cause erasure when exposed to direct
sunlight. If the M27C800 is to be exposed to these
types of lighting conditions for extended periods of
time, it is suggested that opaque labels be put over
the M27C800 window to prevent unintentional era-
sure. The recommended erasure procedure for
M27C800 is exposure to short wave ultraviolet
light which has a wavelength of 2537 Å. The inte-
grated dose (i.e. UV intensity x exposure time) for
erasure should be a minimum of 30 W-sec/cm2.
The erasure time with this dosage is approximate-
ly 30 to 40 minutes using an ultraviolet lamp with
12000 µW/cm2 power rating. The M27C800
should be placed within 2.5cm (1 inch) of the lamp
tubes during the erasure. Some lamps have a filter
on their tubes which should be removed before
erasure.
11/17

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