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PDF DS2106SY40 Data sheet ( Hoja de datos )

Número de pieza DS2106SY40
Descripción Rectifier Diode
Fabricantes Dynex Semiconductor 
Logotipo Dynex Semiconductor Logotipo



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No Preview Available ! DS2106SY40 Hoja de datos, Descripción, Manual

DS2106SY
DS2106SY
Rectifier Diode
Replaces October 2001 version, DS4182-5.0
FEATURES
s Double Side Cooling
s High Surge Capability
APPLICATIONS
s Rectification
s Freewheel Diode
s DC Motor Control
s Power Supplies
s Welding
s Battery Chargers
KEY PARAMETERS
VRRM 4000V
IF(AV) 3830A
I 62500A
FSM
DS4182-5.1 December 2001
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
VRRM
V
Conditions
DS2106SY40
DS2106SY39
DS2106SY38
DS2106SY37
DS2106SY36
DS2106SY35
4000
3900
3800
3700
3600
3500
Lower voltage grades available.
V = V + 100V
RSM
RRM
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, e.g.:
DS2106SY37
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
Outline type code: F
See Package Details for further information.
Fig. 1 Package outline
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DS2106SY40 pdf
100000
IF
dIF/dt
QS
IRM
10000
Conditions:
Tj = 150˚C
VR = 100V
IF = 2000A
1000
Conditions:
Tj = 150˚C
VR = 100V
IF = 2000A
100
DS2106SY
1000
0.1
1.0 10
Rate of decay of forward current, dIF/dt - (A/µs)
Fig.4 Total stored charge
100
10
0.1
1.0 10
Rate of decay of forward current, dIF/dt - (A/µs)
Fig.5 Maximum reverse recovery current
100
120
I2t = Î2 x t
2
100
80 12
60
I2t
40
10
8
20 6
04
1 10 1 2 3 5 10 20 50
ms Cycles at 50Hz
Duration
Fig.6 Surge (non-repetitive) forward current vs time
(with 50% VRRM at Tcase 150˚C)
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0.1
Anode side cooled
0.01
Double side cooled
0.001
0.0001
0.001
0.01
Conduction Effective thermal resistance
Junction to case ˚C/W
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
Double side
0.0095
0.0105
0.0112
0.0139
Single side
0.019
0.020
0.0207
0.0234
0.1 1
Time - (s)
10 100
Fig.7 Maximum (limit) transient thermal impedance -
junction to case
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