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Número de pieza | FA57SA50LC | |
Descripción | HEXFET Power MOSFET | |
Fabricantes | International Rectifier | |
Logotipo | ||
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No Preview Available ! l Fully Isolated Package
l Easy to Use and Parallel
l Low On-Resistance
l Dynamic dv/dt Rating
l Fully Avalanche Rated
l Simple Drive Requirements
l Low Gate Charge Device
l Low Drain to Case Capacitance
l Low Internal Inductance
G
Description
Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The SOT-227 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 500 watts. The low thermal
resistance of the SOT-227 contribute to its wide acceptance
throughout the industry.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
VISO
Operating Junction and
Storage Temperature Range
Insulation Withstand Voltage (AC-RMS)
Mounting torque, M4 srew
Thermal Resistance
RθJC
RθCS
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
PD - 91650A
FA57SA50LC
HEXFET® Power MOSFET
D VDSS = 500V
RDS(on) = 0.08Ω
ID = 57A
S
S O T -2 2 7
Max.
57
36
228
625
5.0
± 20
725
57
62.5
3.0
-55 to + 150
2.5
1.3
Typ.
–––
0.05
Max.
0.20
–––
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
kV
N•m
Units
°C/W
1
2/1/99
1 page 60.0
50.0
40.0
30.0
20.0
10.0
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
1
FA57SA50LC
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
0.1 D = 0.50
0.20
0.10
0.05
0.01 0.02
0.01
0.001
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
0.0001
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
1
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet FA57SA50LC.PDF ] |
Número de pieza | Descripción | Fabricantes |
FA57SA50LC | HEXFET Power MOSFET | International Rectifier |
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