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Número de pieza | F1072 | |
Descripción | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | |
Fabricantes | Polyfet RF Devices | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de F1072 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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F1072
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" TMprocess features
gold metal for greatly extended
lifetime. Low output capacitance
and high Ft enhance broadband
performance
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
100 Watts Gemini
Package Style AH
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 Co )
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
290 Watts
0.6 oC/W
200 oC
-65 oC to 150oC
12 A
70 V
70 V 30V
RF CHARACTERISTICS ( 100WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gai
10
dB Idq = 1.2 A, Vds = 28.0 V, F = 400 MHz
η Drain Efficiency
60 % Idq = 1.2 A, Vds = 28.0 V, F = 400 MHz
VSWR Load Mismatch Toleranc
20:1 Relative Idq = 1.2 A, Vds = 28.0 V, F = 400 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss Drain Breakdown Voltag
65
V Ids = 0.15 A, Vgs = 0V
Idss Zero Bias Drain Curren
3 mA Vds = 28.0 V, Vgs = 0V
Igss Gate Leakage Curren
1 uA Vds = 0 V, Vgs = 30V
Vgs Gate Bias for Drain Curren
1 7 V Ids = 0.3 A, Vgs = Vds
gM Forward Transconductanc
2.4
Mho
Vds = 10V, Vgs = 5V
Rdson Saturation Resistanc
0.5
Ohm
Vgs = 20V, Ids = 12 A
Idsat
Saturation Curren
16.5
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitanc
99 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitanc
12
pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitanc
60 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet F1072.PDF ] |
Número de pieza | Descripción | Fabricantes |
F1070 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Polyfet RF Devices |
F1072 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Polyfet RF Devices |
F1074 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Polyfet RF Devices |
F1076 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Polyfet RF Devices |
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