DataSheet.es    


PDF F1034 Data sheet ( Hoja de datos )

Número de pieza F1034
Descripción PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Fabricantes Polyfet RF Devices 
Logotipo Polyfet RF Devices Logotipo



Hay una vista previa y un enlace de descarga de F1034 (archivo pdf) en la parte inferior de esta página.


Total 2 Páginas

No Preview Available ! F1034 Hoja de datos, Descripción, Manual

polyfet rf devices
F1034
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" TMprocess features
gold metal for greatly extended
lifetime. Low output capacitance
and high Ft enhance broadband
performance
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
5 Watts Single Ended
Package Style AA
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 Co )
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
20 Watts
10 oC/W
200 oC
-65 oC to 150oC
0.8 A
70 V
70 V 30V
RF CHARACTERISTICS (
SYMBOL PARAMETER
MIN TYP
Gps Common Source Power Gai
14
η Drain Efficiency
45
VSWR Load Mismatch Toleranc
5WATTS OUTPUT )
MAX UNITS TEST CONDITIONS
dB Idq = 0.2 A, Vds = 28.0 V, F = 400 MHz
% Idq = 0.2 A, Vds = 28.0 V, F = 400 MHz
20:1 Relative Idq = 0.2 A, Vds = 28.0 V, F = 400 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss Drain Breakdown Voltag
65
V Ids = 0.01 A, Vgs = 0V
Idss Zero Bias Drain Curren
0.2 mA Vds = 28.0 V, Vgs = 0V
Igss Gate Leakage Curren
1 uA Vds = 0 V, Vgs = 30V
Vgs Gate Bias for Drain Curren
1 7 V Ids =0.02 A, Vgs = Vds
gM Forward Transconductanc
0.2
Mho
Vds = 10V, Vgs = 5V
Rdson Saturation Resistanc
3.5
Ohm
Vgs = 20V, Ids = 1A
Idsat
Saturation Curren
1.2
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitanc
9 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitanc
1 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitanc
6 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com

1 page





PáginasTotal 2 Páginas
PDF Descargar[ Datasheet F1034.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
F103Diode ( Rectifier )American Microsemiconductor
American Microsemiconductor
F1032USAW FiltersToshiba
Toshiba
F1034PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTORPolyfet RF Devices
Polyfet RF Devices

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar