DataSheet.es    


PDF F1022 Data sheet ( Hoja de datos )

Número de pieza F1022
Descripción PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Fabricantes Polyfet RF Devices 
Logotipo Polyfet RF Devices Logotipo



Hay una vista previa y un enlace de descarga de F1022 (archivo pdf) en la parte inferior de esta página.


Total 2 Páginas

No Preview Available ! F1022 Hoja de datos, Descripción, Manual

polyfet rf devices
F1022
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" TMprocess features
gold metal for greatly extended
lifetime. Low output capacitance
and high Ft enhance broadband
performance
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
80 Watts Gemini
Package Style AK
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 Co )
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
290 Watts
0.6 oC/W
200 oC
-65 oC to 150oC
12 A
70 V
70 V 30V
RF CHARACTERISTICS ( 80WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gai
10
dB Idq = 1.2 A, Vds = 28.0 V, F = 400 MHz
η Drain Efficiency
60 % Idq = 1.2 A, Vds = 28.0 V, F = 400 MHz
VSWR Load Mismatch Toleranc
20:1 Relative Idq = 1.2 A, Vds = 28.0 V, F = 400 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss Drain Breakdown Voltag
65
V Ids = 0.15 A, Vgs = 0V
Idss Zero Bias Drain Curren
3 mA Vds = 28.0 V, Vgs = 0V
Igss Gate Leakage Curren
1 uA Vds = 0 V, Vgs = 30V
Vgs Gate Bias for Drain Curren
1 7 V Ids = 0.3 A, Vgs = Vds
gM Forward Transconductanc
2.4
Mho
Vds = 10V, Vgs = 5V
Rdson Saturation Resistanc
0.5
Ohm
Vgs = 20V, Ids = 12 A
Idsat
Saturation Curren
16.5
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitanc
99 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitanc
12
pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitanc
60 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com

1 page





PáginasTotal 2 Páginas
PDF Descargar[ Datasheet F1022.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
F102Diode ( Rectifier )American Microsemiconductor
American Microsemiconductor
F1020PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTORPolyfet RF Devices
Polyfet RF Devices
F1021PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTORPolyfet RF Devices
Polyfet RF Devices
F1022PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTORPolyfet RF Devices
Polyfet RF Devices

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar