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PDF FFB3904 Data sheet ( Hoja de datos )
| Número de pieza | FFB3904 | |
| Descripción | NPN General Purpose Amplifier | |
| Fabricantes | Fairchild Semiconductor | |
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Discrete POWER & Signal
Technologies
FFB3904
FMB3904
MMPQ3904
E2
B2
C1
C2
B1
pin #1 E1
SC70-6
Mark: .1A
C2
E1
C1
B2
E2
pin #1 B1
SuperSOT™-6
Mark: .1A
B4
E4
B3
E3
B2
E2
B1
E1 C4
C4
C3
C3
C2
C2
C1
SOIC-16 C1
NPN General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier. Sourced from Process 23.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
VCBO
Collector-Emitter Voltage
Collector-Base Voltage
40
60
VEBO
Emitter-Base Voltage
6.0
IC
TJ, Tstg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
200
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
FFB3904
PD Total Device Dissipation
Derate above 25°C
RθJA Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
300
2.4
415
Max
FMB3904
700
5.6
180
MMPQ3904
1,000
8.0
125
240
Units
mW
mW/°C
°C/W
°C/W
°C/W
© 1998 Fairchild Semiconductor Corporation
1 page  
NPN Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Storage Time vs Collector Current
500
T J = 25°C
IB1 = IB2 =
Ic
10
100
T J = 125°C
10
5
1 10 100
I C - COLLECTOR CURRENT (mA)
Fall Time vs Collector Current
500
IB1 = IB2 =
Ic
10
T J = 125°C
VCC = 40V
100
T J = 25°C
10
5
1 10 100
I C - COLLECTOR CURRENT (mA)
Test Circuits
3.0 V
300 ns
Duty Cycle = 2%
0
- 0.5 V
< 1.0 ns
10.6 V
10 KΩ
275 Ω
C1 < 4.0 pF
FIGURE 1: Delay and Rise Time Equivalent Test Circuit
10 < t1 < 500 µs
Duty Cycle = 2%
0
t1
- 9.1 V
10.9 V
< 1.0 ns
10 KΩ
1N916
3.0 V
275 Ω
C1 < 4.0 pF
FIGURE 2: Storage and Fall Time Equivalent Test Circuit
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet FFB3904.PDF ] | |
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