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PDF Feb-65 Data sheet ( Hoja de datos )

Número de pieza Feb-65
Descripción High Voltage Subscriber Line IC HV-SLIC
Fabricantes Siemens Semiconductor Group 
Logotipo Siemens Semiconductor Group Logotipo



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No Preview Available ! Feb-65 Hoja de datos, Descripción, Manual

ICs for Communications
High Voltage Subscriber Line IC
HV-SLIC
PEB/F 4065 Version 3.0
Data Sheet 03.98
DS 1

1 page




Feb-65 pdf
PEB/F 4065
1.2 Functional Description
Overview
VH BGND
Ιa
RING
Vab
Ιb
TIP
Buffer
Buffer
Supply
Switch
VHINT
Differential
I/V-Converter
Control
C1
C2
V/I Converter
V2W
Reference
PDN
Current sensor
VBAT
Supply
ΙT ΙL
VBAT VBIM
AGND VSS VDD ITB10371
Figure 1 Block Diagram
The PEB 4065 supports AC and DC control loops based on feeding a voltage Vab to the
line and sensing the transversal line current Iab (Figure 2).
It converts a unipolar input voltage V2W into a differential output voltage Vab with an AC
receiving gain of
Gr= VabAC/V2WAC = 40.
This is accomplished by converting the input voltage to a current which is used to
transpose the low voltage signals of the interface to the high voltage line feeding section.
This current is reconverted to two voltages of opposite phase which are referenced to
the positive and negative supply voltage, respectively. Thus the differential DC
line-voltage in all normal polarity modes except ringing is related to the input voltage by
VabDC = VBAT VHINT + Vfix – 40 × V2WDC
VBAT negative battery voltage
VHINT internal positive supply voltage
Vfix internal voltage drop of supply filter (appr. 2 V).
Depending on the operation mode, VHINT is switched either to VH (VHINT = VH – 1 V) or to
BGND (VHINT = – 0.5 V) via the supply switch.
Semiconductor Group
5
1998-03-01

5 Page





Feb-65 arduino
PEB/F 4065
2 Electrical Characteristics
Electrical Characteristics
2.1 Absolute Maximum Ratings
Table 3
Parameter
Symbol
Limit Values
Unit Condition
min.
max.
Battery voltage
Auxiliary supply
voltage
VBAT
VH
Total battery supply VH VBAT
voltage, continuously
– 90
– 0.5
0.5
90
160
V referred to BGND
V referred to BGND
V–
Total battery supply VH VBAT
voltage, pulse < 1 ms
170 V –
VDD supply voltage
VSS supply voltage
Ground voltage
difference
VDD
VSS
VBGND VAGND
– 0.4
– 5.5
– 0.5
5.5
0.4
0.5
V referred to AGND
V referred to AGND
V–
Junction temperature
Input voltages
Voltages on current
outputs
Tj
V2W, VC1, VC2
VIT, VIL
VSS – 0.3
– 3.5
150 °C
VDD + 0.3 V
VDD + 0.3 V
Voltages on PDN
RING, TIP voltages,
continuously
VPDN
Va, Vb
– 0.3
VDD + 0.3 V
VBAT – 0.3 VH + 0.3 V
RING, TIP voltages, Va, Vb
pulse < 1 ms1)
VBAT – 10 VH + 10 V –
RING, TIP voltages,
pulse < 1 µs1)
Va, Vb
ESD-voltage, all pins –
VBAT – 30 VH + 30 V –
– 1 kV Human body
model
1) See Test Figure 10.
Note: Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Semiconductor Group
11
1998-03-01

11 Page







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