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PDF FDZ208P Data sheet ( Hoja de datos )

Número de pieza FDZ208P
Descripción P-Channel 30 Volt PowerTrench
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDZ208P Hoja de datos, Descripción, Manual

January 2003
FDZ208P
P-Channel 30 Volt PowerTrench  BGA MOSFET
General Description
Combining Fairchild’s advanced 30 Volt P-Channel
Trench II Process with ± 25 Volts Vgs. Abs. Max Gate
Rating for the ultimate low Rds Battery Protection
MOSFET. This MOSFET also embodies a
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-
low profile packaging, low gate charge, and low RDS(ON).
Applications
Battery management
Load switch
Battery protection
Features
–12.5 A, –30 V. RDS(ON) = 10.5 m@ VGS = –10 V
RDS(ON) = 16.5 m@ VGS = –4.5 V
Occupies only 14 mm2 of PCB area. Only 42% of
the area of SO-8
Ultra-thin package: less than 0.80 mm height when
mounted to PCB
3.5 x 4 mm2 footprint
High power and current handling capability
Pin 1
D DDD DD
D SSS SD
D SSS SD
D SSS SD
DGSS SD
Bottom
Pin 1
Top
S
G
D
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, Tstg
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation (Steady State)
(Note 1a)
(Note 1a)
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJB Thermal Resistance, Junction-to-Ball
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
208P
FDZ208P
7’’
Ratings
–30
± 25
–12.5
–60
2.2
1.0
–55 to +150
56
4.5
0.6
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
3000 units
©2003 Fairchild Semiconductor Corporation
FDZ208P Rev. C1 (W)

1 page




FDZ208P pdf
Typical Characteristics
10
ID = -12.5A
8
6
4
2
0
0 10
VDS = -10V
-20V
-15V
20 30
Qg, GATE CHARGE (nC)
40
50
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
VGS = -10V
SINGLE PULSE
0.1 RθJA = 119oC/W
TA = 25oC
1ms
10ms
100ms
1s
10s
DC
0.01
0.01
0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
3500
3000
2500
CISS
f = 1MHz
VGS = 0 V
2000
1500
1000
COSS
500
CRSS
0
0
5 10 15 20 25
-VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
40
SINGLE PULSE
RθJA = 119°C/W
30 TA = 25°C
20
10
0
0.01
0.1
1 10
t1, TIME (sec)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
SINGLE PULSE
RθJA(t) = r(t) * RθJA
RθJA = 119 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.0001
0.001
0.01
0.1 1
10
t1, TIME (sec)
100
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
1000
FDZ208P Rev. C1 (W)

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