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PDF FDW254P Data sheet ( Hoja de datos )

Número de pieza FDW254P
Descripción P-Channel 1.8V Specified PowerTrench MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDW254P Hoja de datos, Descripción, Manual

August 2000
PRELIMINARY
FDW254P
P-Channel 1.8V Specified PowerTrenchMOSFET
General Description
This P-Channel 1.8V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (1.8V – 8V).
Applications
Load switch
Motor drive
DC/DC conversion
Power management
Features
–9.2 A, –20 V.
RDS(ON) = 0.012 @ VGS = –4.5 V
RDS(ON) = 0.015 @ VGS = –2.5 V
RDS(ON) = 0.0215 @ VGS = –1.8 V
Rds ratings for use with 1.8 V logic
Low gate charge
High performance trench technology for extremely
low RDS(ON)
Low profile TSSOP-8 package
D
S
S
D
TSSOP-8
G
S
S
D
Pin 1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1)
PD Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
254P
FDW254P
13’’
54
63
72
81
Ratings
-20
±8
-9.2
-50
1.3
0.6
-55 to +150
96
208
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
2000 Fairchild Semiconductor Corporation
FDW254P Rev C (W)

1 page




FDW254P pdf
TSSOP-8 Package Dimensions
TSSOP-8 (FS PKG Code S4)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in millimeters
Part Weight per unit (gram): 0.0334
January 2000, Rev. B

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