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PDF FDW2521C Data sheet ( Hoja de datos )

Número de pieza FDW2521C
Descripción Complementary PowerTrench MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDW2521C Hoja de datos, Descripción, Manual

May 2002
FDW2521C
Complementary PowerTrenchMOSFET
General Description
This complementary MOSFET device is produced using
Fairchild’s advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance.
Applications
DC/DC conversion
Power management
Load switch
Features
Q1: N-Channel
5.5 A, 20 V. RDS(ON) = 21 m@ VGS = 4.5 V
RDS(ON) = 35 m@ VGS = 2.5 V
Q2: P-Channel
–3.8 A, 20 V. RDS(ON) = 43 m@ VGS = –4.5 V
RDS(ON) = 70 m@ VGS = –2.5 V
High performance trench technology for extremely
low RDS(ON)
Low profile TSSOP-8 package
G2
S2
S2
D2
TSSOP-8
G1
S1
S1
D1
Pin 1
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation
(Note 1a)
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
2521C
FDW2521C
13’’
Q1
1
2
3
4
Q2
8
7
6
5
Q1 Q2
20 –20
±12 ±12
5.5 –3.8
30 –30
1.0
0.6
-55 to +150
Units
V
V
A
W
°C
125 °C/W
208
Tape width
12mm
Quantity
3000 units
2002 Fairchild Semiconductor Corporation
FDW2521C Rev D(W)

1 page




FDW2521C pdf
Typical Characteristics: Q1
5
ID = 5.5A
4
3
VDS = 5V
15V
10V
2
1
0
0 2 4 6 8 10 12 14
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
VGS = 4.5V
0.1
SINGLE PULSE
RθJA = 250oC/W
TA = 25oC
1ms
10ms
100ms
1s
10s
DC
0.01
0.1
1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
1800
1500
1200
900
600
300
0
0
CISS
f = 1MHz
VGS = 0 V
COSS
CRSS
4 8 12 16
VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
RθJA = 250°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01
0.1 1 10
t1, TIME (sec)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
FDW2521C Rev D(W)

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