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PDF FDW2502 Data sheet ( Hoja de datos )

Número de pieza FDW2502
Descripción Dual P-Channel 2.5V Specified PowerTrench MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDW2502 Hoja de datos, Descripción, Manual

May 2000
PRELIMINARY
FDW2502P
Dual P-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild's Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V –12V).
Applications
Load switch
Motor drive
DC/DC conversion
Power management
Features
–4.4 A, –20 V. RDS(ON) = 0.035 @ VGS = –4.5 V
RDS(ON) = 0.057 @ VGS = –2.5 V.
Extended VGSS range (±12V) for battery applications.
High performance trench technology for extremely
low RDS(ON) .
Low profile TSSOP-8 package.
G2
S2
S2
D2
TSSOP-8
G1
S1
S1
D1
Pin 1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
1
2
3
4
Ratings
–20
±12
–4.4
–30
1.0
0.6
-55 to +150
125
208
8
7
6
5
Units
V
V
A
W
°C
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
2502P
FDW2502P
13’’
Tape width
12mm
Quantity
3000 units
©2000 Fairchild Semiconductor Corporation
FDW2502P Rev. C1 (W)

1 page




FDW2502 pdf
TSSOP-8 Package Dimensions
TSSOP-8 (FS PKG Code S4)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in millimeters
Part Weight per unit (gram): 0.0334
January 2000, Rev. B

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