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Número de pieza | FDU6612A | |
Descripción | 30V N-Channel PowerTrench MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
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No Preview Available ! February 2004
FDD6612A/FDU6612A
30V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) , fast switching speed and
extremely low RDS(ON) in a small package.
Applications
• DC/DC converter
• Motor Drives
Features
• 30 A, 30 V
RDS(ON) = 20 mΩ @ VGS = 10 V
RDS(ON) = 28 mΩ @ VGS = 4.5 V
• Low gate charge
• Fast Switching
• High performance trench technology for extremely
low RDS(ON)
D
G
S
DTO-P-2A5K2
(TO-252)
GDS
I-PAK
(TO-251AA)
D
G
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25°C
@TA=25°C
Pulsed
(Note 3)
(Note 1a)
(Note 1a)
PD
TJ, TSTG
Power Dissipation
@TC=25°C
(Note 1)
@TA=25°C
(Note 1a)
@TA=25°C
(Note 1b)
Operating and Storage Junction Temperature Range
Ratings
30
±20
30
9.5
60
36
2.8
1.3
–55 to +175
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJA Thermal Resistance, Junction-to-Ambient (Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Package
FDD6612A
FDD6612A
D-PAK (TO-252)
FDU6612A
FDU6612A
I-PAK (TO-251)
Reel Size
13’’
Tube
3.9
45
96
Tape width
12mm
N/A
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
75
©2004 Fairchild Semiconductor Corporation
FDD6612A/FDU6612A Rev E(W)
1 page Typical Characteristics
10
ID = 9.5A
8
6
VDS = 10V
20V
15V
4
2
0
0 2 4 6 8 10 12
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
14
100
RDS(ON) LIMIT
10
1
100µs
1ms
10ms
100ms
1s
10s
DC
VGS = 10V
0.1 SINGLE PULSE
RθJA = 96oC/W
TA = 25oC
0.01
0.01
0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area
1000
800
600
Ciss
f = 1 MHz
VGS = 0 V
400
Coss
200
Crss
0
0 5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics
50
SINGLE PULSE
RθJA = 96oC/W
40 TA = 25oC
30
20
10
0
0.001
0.01
0.1 1
t1, TIME (sec)
10
Figure 10. Single Pulse Maximum
Power Dissipation
100
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.0001
SINGLE PULSE
0.001
0.01
0.1 1
t1, TIME (sec)
RθJA(t) = r(t) * RθJA
RθJA = 96oC/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD6612A/FDU6612A Rev. E(W)
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet FDU6612A.PDF ] |
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