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PDF FDT459N Data sheet ( Hoja de datos )

Número de pieza FDT459N
Descripción N-Channel Enhancement Mode Field Effect Transistor
Fabricantes Fairchild Semiconductor　
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDT459N Hoja de datos, Descripción, Manual

March 1998
FDT459N
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance,
provide superior switching performance. These products are
well suited to low voltage, low current applications such as
notebook computer power management, battery powered
circuits, and DC motor control.
Features
6.5 A, 30 V. RDS(ON) = 0.035Ω @ VGS = 10 V
RDS(ON) = 0.055 Ω @ VGS = 4.5 V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SO-8
D
SOT-223
SOIC-16
D
GDS
Absolute Maximum Ratings TA = 25oC unless otherwise noted
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage - Continuous
ID Maximum Drain Current - Continuous (Note 1a)
- Pulsed
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
* Order option J23Z for cropped center drain lead.
(Note 1a)
(Note 1)
© 1998 Fairchild Semiconductor Corporation
GS
FDT459N
30
±20
6.5
20
3
1.3
1.1
-55 to 150
42
12
Units
V
V
A
W
°C
°C/W
°C/W
FDT459NRev.C

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