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PDF FDS9953A Data sheet ( Hoja de datos )
| Número de pieza | FDS9953A | |
| Descripción | Dual 30V P-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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May 2001
FDS9953A
Dual 30V P-Channel PowerTrench® MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 25V).
Applications
• Power management
• Load switch
• Battery protection
Features
• –2.9 A, –30 V
RDS(ON) = 130 mΩ @ VGS = –10 V
RDS(ON) = 200 mΩ @ VGS = –4.5 V
• Low gate charge (2.5nC typical)
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
DD2DD1DD1
DD2
SO-8
Pin 1 SO-8
S1GG1
SS2GS2 S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
V GSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, TSTG
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS9953A
FDS9953A
13’’
©2001 Fairchild Semiconductor Corporation
5
6 Q1
7
Q2
8
4
3
2
1
Ratings
–30
±25
±2.9
±10
2
1.6
1
0.9
–55 to +150
78
40
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
FDS9953A Rev B(W)
1 page  
Typical Characteristics
10
ID =-1.0 A
8
6
VDS = -5V
-10V
-15V
4
2
0
0 1 23 45
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
10 RDS(ON) LIMIT
1
VGS = -10V
0.1 SINGLE PULSE
RθJA = 135oC/W
T A = 25oC
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.1 1 10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
300
250
200
150
100
50
0
0
CISS
f = 1MHz
VGS = 0 V
COSS
CRSS
5 10 15 20 25
-VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
RθJA = 135°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01
0.1 1
t1, TIME (sec)
10 100
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) + RθJA
RθJA = 135 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS9953A Rev B(W)
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDS9953A.PDF ] | |
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