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PDF FDS8333C Data sheet ( Hoja de datos )

Número de pieza FDS8333C
Descripción 30V N & P-Channel PowerTrench MOSFETs
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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August 2002
FDS8333C
30V N & P-Channel PowerTrench® MOSFETs
General Description
These N & P-Channel MOSFETs are
produced using Fairchild Semiconductor’s
advanced PowerTrench process that has been
especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage
and battery powered applications where low
in-line power loss and fast switching are
required.
Features
Q1 4.1 A, 30V. RDS(ON) = 80 m@ VGS = 10 V
RDS(ON) = 130 m@ VGS = 4.5 V
Q2 –3.4 A, 30V. RDS(ON) = 130 m@ VGS = –10 V
RDS(ON) = 200 m@ VGS = –4.5 V
Low gate charge
High performance trench technology for extremely
low RDS(ON).
High power and handling capability in a widely used
surface mount package.
DD1DD2DD2
DD1
SO-8
Pin 1 SO-8
G2
S2 G
G1
S1 S
S
S
Q2
5
6
Q1
7
8
4
3
2
1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
V GSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS8333C
FDS8333C
7’’
Q1 Q2
30 –30
±16 ±20
4.1 –3.4
20 –20
2
1.6
1
0.9
–55 to +150
78
40
Units
V
A
W
°C
°C/W
Tape width
12mm
Quantity
2500 units
©2002 Fairchild Semiconductor Corporation
FDS8333C Rev C (W)

1 page




FDS8333C pdf
Typical Characteristics: N-Channel (continued)
10
ID = 4.1A
8
6
4
2
0
01
VDS = 5V
10V
15V
23
Qg, GATE CHARGE (nC)
4
5
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
VGS = 10V
SINGLE PULSE
0.1 RθJ A = 135oC/W
TA = 25oC
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.1
1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
400
f = 1MHz
VGS = 0 V
300
CISS
200
100
0
0
CRSS
5
COSS
10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
0.001
0.01
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
0.1 1
t1, TIME (sec)
10
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
FDS8333C Rev C (W)

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