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PDF FDS7079ZN3 Data sheet ( Hoja de datos )

Número de pieza FDS7079ZN3
Descripción 30 Volt P-Channel PowerTrench MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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February 2004
FDS7079ZN3
30 Volt P-Channel PowerTrenchMOSFET
General Description
Advanced P Channel MOSFET combined with
Advanced SO8 FLMP package providing a device with
extremely low thermal impedance and improved
electrical performance.
Applications for this device include multi-cell battery
protection and charging, including protection and load
switching in notebook computer and notebook battery
packs.
Features
–16 A, –30 V. RDS(ON) = 7.5 m@ VGS = –10 V
RDS(ON) = 11.5 m@ VGS = – 4.5 V
ESD protection diode (note 3)
ESD rating: 4kV
High performance trench technology for extremely
low RDS(ON)
FLMP SO-8 package for enhanced thermal
performance in industry-standard package size
DNCDNCDNCDNC
D
FLMP SO-8
Pin 1SO-
SSSS SSGG
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS7079ZN3
FDS7079ZN3
13’’
2004 Fairchild Semiconductor Corporation
Bottom Side Drain Contact
54
63
72
81
Ratings
–30
±25
–16
–60
3.13
1.5
–55 to +150
40
0.5
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
FDS7079ZN3 Rev C1 (W)

1 page




FDS7079ZN3 pdf
Dimensional Outline and Pad Layout
FDS7079ZN3 Rev C1 (W)

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