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PDF FDS7066SN3 Data sheet ( Hoja de datos )
| Número de pieza | FDS7066SN3 | |
| Descripción | 30V N-Channel PowerTrench SyncFET | |
| Fabricantes | Fairchild Semiconductor | |
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January 2004
FDS7066SN3
30V N-Channel PowerTrench SyncFET™
General Description
The FDS7066SN3 is designed to replace a single SO-8
FLMP MOSFET and Schottky diode in synchronous
DC:DC power supplies. This 30V MOSFET is designed
to maximize power conversion efficiency, providing a
low RDS(ON) and low gate charge. The FDS7066SN3
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDS7066SN3 as the low-side switch in a
synchronous rectifier is close to the performance of the
FDS7066N3 in parallel with a Schottky diode.
Applications
• DC/DC converter
• Motor drivesFeatures
Features
• 19 A, 30 V
RDS(ON) = 5.5 mΩ @ VGS = 10 V
RDS(ON) = 6.0 mΩ @ VGS = 4.5 V
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
• Fast switching
• FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
Bottom-side
5 Drain Contact
6
7
8
4
3
2
1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS7066SN3
FDS7066SN3
13’’
2004 Fairchild Semiconductor Corporation
Ratings
30
±16
19
60
3.0
1.7
–55 to +150
40
0.5
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
FDS7066SN3 Rev C2 (W)
1 page  
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky diode
in parallel with a MOSFET. Figure 12 shows the reverse
recovery characteristic of the FDS7066SN3.
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase
the power in the device.
0.1
0.01
0.001
TA = 125oC
TA = 100oC
0.0001
0.00001
0
TA = 25oC
10 20
VDS, REVERSE VOLTAGE (V)
30
12.5 nS/div
Figure 12. FDS7066SN3 SyncFET body
diode reverse recovery characteristic.
Figure 14. SyncFET body diode reverse leakage
versus drain-source voltage and temperature
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an equivalent
size MOSFET produced without SyncFET (FDS7066N3).
12.5 nS/div
Figure 13. Non-SyncFET (FDS7066N3) body
diode reverse recovery characteristic.
FDS7066SN3 Rev C2 (W)
5 Page | ||
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