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PDF FDS7066N3 Data sheet ( Hoja de datos )

Número de pieza FDS7066N3
Descripción 30V N-Channel PowerTrench MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDS7066N3 Hoja de datos, Descripción, Manual

May 2003
FDS7066N3
30V N-Channel PowerTrenchMOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low RDS(ON) in a small package.
Applications
Synchronous rectifier
DC/DC converter
Features
23 A, 30 V
RDS(ON) = 5.5 m@ VGS = 10 V
RDS(ON) = 6.5 m@ VGS = 4.5 V
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
Fast switching
FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
Bottom-side
5 Drain Contact
6
7
8
4
3
2
1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS7066N3
FDS7066N3
13’’
2002 Fairchild Semiconductor Corporation
Ratings
30
±16
23
60
3.0
1.7
–55 to +150
40
0.5
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
FDS7066N3 Rev B1 (W)

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FDS7066N3 pdf
Dimensional Outline and Pad Layout
FDS7066N3 Rev B1 (W)

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