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PDF FDS7064SN3 Data sheet ( Hoja de datos )

Número de pieza FDS7064SN3
Descripción 30V N-Channel PowerTrench SyncFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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February 2004
FDS7064SN3
30V N-Channel PowerTrenchSyncFET
General Description
The FDS7064SN3 is designed to improve the efficiency
of Buck Regulators. Used as the Synchronous rectifier,
(Low side MOSFET), losses can be reduced, not only in
this device, but also in the Control switch, (High side
MOSFET). After the low side MOSFET turns off,
reverse recovery current in the body diode is dissipated
in the High Side device. A Discrete Schottky diode in
parallel with the Low Side MOSFET can lower the
reverse recovery current, but parasitic PCB and
Package Inductance reduce the effectiveness of the
Schottky. SyncFETTM technology reduces this
inductance to a minimum by providing a monolithic
solution (MOSFET and Schottky in the same die),
resulting in optimum performance.
Applications
Synchronous Rectifier
Features
16 A, 30 V
RDS(ON) = 8.0 m@ VGS = 10 V
RDS(ON) = 9.5 m@ VGS = 4.5 V
High performance trench technology for extremely
low RDS(ON)
No inductance between MOSFET and Schottky
40% reduction in Body Diode Forward Voltage
Optimized to reduce losses in Synchronous Buck
Regulators
FLMP SO-8 package for enhanced thermal
performance.
DNCDNCDNCDNC
D
FLMP SO-8
Pin 1SO-
SSSS SSGG
Bottom-side
5 Drain Contact
6
7
8
4
3
2
1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS7064SN3
FDS7064SN3
13’’
2004 Fairchild Semiconductor Corporation
Ratings
30
±16
16
60
3.13
1.5
–55 to +150
40
0.5
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
FDS7064SN3 Rev C1 (W)

1 page




FDS7064SN3 pdf
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky diode
in parallel with a MOSFET. Figure 12 shows the reverse
recovery characteristic of the FDS7064SN3.
Figure 12. FDS7064SN3 SyncFET body
diode reverse recovery characteristic.
12.5 nS/div
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase
the power in the device.
0.1
0.01
0.001
TA = 125oC
TA = 100oC
0.0001
0.00001
0
TA = 25oC
5 10 15 20 25
VDS, REVERSE VOLTAGE (V)
30
Figure 13. SyncFET body diode reverse leakage
versus drain-source voltage and temperature
FDS7064SN3 Rev C1 (W)

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