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PDF FDS6990S Data sheet ( Hoja de datos )
| Número de pieza | FDS6990S | |
| Descripción | Dual 30V N-Channel PowerTrench SyncFET | |
| Fabricantes | Fairchild Semiconductor | |
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May 2001
FDS6990S
Dual 30V N-Channel PowerTrench® SyncFET™
General Description
The FDS6990S is designed to replace a dual SO-8
MOSFET and two Schottky diodes in synchronous
DC:DC power supplies. This 30V MOSFET is designed
to maximize power conversion efficiency, providing a
low RDS(ON) and low gate charge. Each MOSFET
includes integrated Schottky diodes using Fairchild’s
monolithic SyncFET technology. The performance of
the FDS6990S as the low-side switch in a synchronous
rectifier is similar to the performance of the FDS6990A
in parallel with a Schottky diode.
Applications
• DC/DC converter
• Motor drives
Features
• 7.5A, 30 V.
RDS(ON) = 22 mΩ @ VGS = 10 V
RDS(ON) = 30 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky diode
• Low gate charge (11 nC typical)
• High performance trench technology for extremely low
RDS(ON)
• High power and current handling capability
DD1
DD1
DD2
DD2
SO-8
Pin 1 SO-8
SS2GS2SS1GG1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6990S
FDS6990S
13’’
©2001 Fairchild Semiconductor Corporation
5
Q1
6
7
Q2
8
Ratings
30
±20
7.5
20
2
1.6
1
0.9
–55 to +150
78
40
Tape width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
FDS6990S Rev B(W)
1 page  
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
shows the reverse recovery characteristic of the
FDS6990S.
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
0.1
0.01
125oC
0.001
0.0001
0V
0.00001
0
25oC
10 20
VDS, REVERSE VOLTAGE (V)
30
10ns/div
Figure 12. FDS6990S SyncFET body
diode reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6990A).
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
0V
10ns/div
Figure 13. Non-SyncFET (FDS6990A) body
diode reverse recovery characteristic.
FDS6990S Rev B (W)
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDS6990S.PDF ] | |
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