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PDF FDS6982 Data sheet ( Hoja de datos )
| Número de pieza | FDS6982 | |
| Descripción | Dual N-Channel/ Notebook Power Supply MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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June 1999
FDS6982
Dual N-Channel, Notebook Power Supply MOSFET
General Description
This part is designed to replace two single SO-8 MOSFETs
in synchronous DC:DC power supplies that provide the
various peripheral voltage rails required in notebook
computers and other battery powered electronic devices.
FDS6982 contains two unique 30V, N-channel, logic level,
PowerTrenchTM MOSFETs designed to maximize power
conversion efficiency.
The high-side switch (Q1) is designed with specific
emphasis on reducing switching losses while the low-side
switch (Q2) is optimized for low conduction (less than 20mΩ
at VGS = 4.5V).
Applications
• Battery powered synchronous DC:DC converters.
• Embedded DC:DC conversion.
Features
• Q2: 8.6A, 30V. RDS(on) = 0.015 Ω @ VGS = 10V
RDS(on) = 0.020 Ω @ VGS = 4.5V
• Q1: 6.3A, 30V. RDS(on) = 0.028 Ω @ VGS = 10V
RDS(on) = 0.035 Ω @ VGS = 4.5V
• Fast switching speed.
• Low gate charge (Q1 typical = 8.5nC).
• High performance trench technology for extremely
low R .
DS(ON)
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
TJ, Tstg
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
5 Q1
6
7
Q2
8
4
3
2
1
Q2 Q1
30 30
±20 ±20
8.6 6.3
30 20
2
1.6
1
0.9
-55 to +150
Units
V
V
A
W
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6982
FDS6982
13”
©1999 Fairchild Semiconductor Corporation
78
40
Tape Width
12mm
°C/W
°C/W
Quantity
2500 units
FDS6982, Rev. C
1 page  
Typical Characteristics: Q2 (continued)
10
ID = 8.6A
8
6
VDS = 5V
10V
15V
4
2
0
0 5 10 15 20 25 30
Qg, GATE CHARGE (nC)
Figure 7. Gate-Charge Characteristics.
35
3000
2500
2000
CISS
f = 1MHz
VGS = 0 V
1500
1000
500
0
0
COSS
CRSS
5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
30
100
RDS(ON) LIMIT
10
1
100µs
1ms
10ms
100ms
1s
10s
DC
0.1
0.01
VGS = 10V
SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
30
SINGLE PULSE
25 RθJA = 135oC/W
TA = 25oC
20
15
10
5
0
0.01
0.1 1 10 100
SINGLE PULSE TIME (SEC)
Figure 10. Single Pulse Maximum
Power Dissipation.
1000
FDS6982, Rev. C
5 Page 
SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC-8 (FS PKG Code S1)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0774
9
September 1998, Rev. A
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet FDS6982.PDF ] | |
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