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PDF FDS6912A Data sheet ( Hoja de datos )
| Número de pieza | FDS6912A | |
| Descripción | Dual N-Channel/ Logic Level/ PowerTrenchTM MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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June 1998
FDS6912A
Dual N-Channel, Logic Level, PowerTrenchTM MOSFET
General Description
These N-Channel Logic Level MOSFETs are
produced using Fairchild Semiconductor's
advanced PowerTrench process that has been
especially tailored to minimize the on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line
power loss and fast switching are required.
Features
6 A, 30 V. RDS(ON) = 0.028 Ω @ VGS = 10 V
RDS(ON) = 0.035 Ω @ VGS = 4.5 V.
Fast switching speed.
Low gate charge (typical 9 nC).
High performance trench technology for extremely low
RDS(ON).
High power and current handling capability.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
D2
D2
D1
D1
F6D9S12A
SO-8
G2
S2
pin 1
G1
S1
SO-8
SOT-223
SOIC-16
54
63
72
81
Absolute Maximum Ratings TA = 25oC unless other wise noted
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1a)
PD Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJC Thermal Resistance, Junction-to-Case (Note 1)
© 1998 Fairchild Semiconductor Corporation
FDS6912A
30
±20
6
20
2
1.6
0.9
-55 to 150
78
40
Units
V
V
A
W
°C
°C/W
°C/W
FDS6912A Rev.C
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet FDS6912A.PDF ] | |
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