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PDF FDS6815 Data sheet ( Hoja de datos )
| Número de pieza | FDS6815 | |
| Descripción | Dual P-Channel 2.5V Specified PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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July 1999
ADVANCE INFORMATION
FDS6815
Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
These P-Channel 2.5V specified MOSFETs are produced
using a rugged gate version of Fairchild's advanced
PowerTrenchTM process. It has been optimized for
power management applications which require a wide
range of gate drive voltages.
Applications
Load switch
Battery protection
Power management
Features
-5.5 A, 20 V. RDS(ON) = 0.040 Ω @ VGS = 4.5 V
RDS(ON) = 0.050 Ω @ VGS = 2.5 V
Extended VGSS range ( ±12V) for battery applications.
Low gate charge.
Fast switching speed.
High performance trench technology for extremely
low RDS(ON).
High power and current handling capability.
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6815
FDS6815
13’’
54
63
72
81
Ratings
20
±12
5.5
50
2.0
1.6
1.0
0.9
-55 to +150
78
40
Tape Width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
1999 Fairchild Semiconductor Corporation
FDS6815 Rev. A
1 page  
SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC-8 (FS PKG Code S1)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0774
9
September 1998, Rev. A
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDS6815.PDF ] | |
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