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PDF FDS6690S Data sheet ( Hoja de datos )

Número de pieza FDS6690S
Descripción 30V N-Channel PowerTrench SyncFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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May 2000
PRELIMINARY
FDS6690S
30V N-Channel PowerTrench® SyncFET
General Description
The FDS6690S is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDS6690S includes
an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDS6690S as the low-side switch in a synchronous
rectifier is close to the performance of the FDS6690A in
parallel with a Schottky diode.
Applications
DC/DC converter
Motor drives
Features
10 A, 30 V.
RDS(ON) = 0.016 @ V GS = 10 V
RDS(ON) = 0.024 @ V GS = 4.5 V
Includes SyncFET Schottky diode
Low gate charge (11 nC typical)
High performance trench technology for extremely low
RDS(ON)
High power and current handling capability
D
D
D
D
SO-8
G
SS
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
V DSS
V GSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, TSTG
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6690S
FDS6690S
13’’
©2000 Fairchild Semiconductor Corporation
5
6
7
8
Ratings
30
±20
10
50
2.5
1.2
1
-55 to +150
50
25
Tape width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
FDS6690S Rev B(W)

1 page




FDS6690S pdf
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
shows the reverse recovery characteristic of the
FDS6690S.
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
0.1
0.01
125oC
0.001
0.0001
25oC
0.00001
0V 0
10 20
VDS, REVERSE VOLTAGE (V)
30
10nS/DIV
Figure 12. FDS6690S SyncFET body
diode reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6690A).
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
0V
10nS/DIV
Figure 13. Non-SyncFET (FDS6690A) body
diode reverse recovery characteristic.
FDS6680S Rev B (W)

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