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PDF FDS6064N3 Data sheet ( Hoja de datos )
| Número de pieza | FDS6064N3 | |
| Descripción | 20V N-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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May 2003
FDS6064N3
20V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low RDS(ON) in a small package.
Applications
• Synchronous rectifier
• DC/DC converter
• FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
Bottom-side
5 Drain Contact
6
7
8
4
3
2
1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
TJ, TSTG
Power Dissipation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6064N3
FDS6064N3
13’’
Ratings
20
±8
23
60
3.0
–55 to +150
40
0.5
Tape width
12mm
Units
V
A
W
°C
°C/W
Quantity
2500 units
2002 Fairchild Semiconductor Corporation
FDS6064N3 Rev B2 (W)
1 page  
Dimensional Outline and Pad Layout
FDS6064N3 Rev B2 (W)
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDS6064N3.PDF ] | |
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