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PDF FDR4410 Data sheet ( Hoja de datos )
| Número de pieza | FDR4410 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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April 1998
FDR4410
N-Channel Enhancement Mode Field Effect Transistor
General Description
The FDR4410 has been designed as a smaller, low cost
alternative to the popular Si4410DY.
The SuperSOTTM-8 package is 40% smaller than the SO-8
package.
The SuperSOTTM-8 advanced package design and
optimized pinout allow the typical power dissipation to be
similar to the bigger SO-8 package.
Features
9.3 A, 30 V. RDS(ON) = 0.013 Ω @ VGS = 10 V
RDS(ON) = 0.020 Ω @ VGS = 4.5 V.
High density cell design for extremely low RDS(ON).
Proprietary SuperSOTTM-8 small outline surface mount
package with high power and current handling capability.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
S
D
D
S 4410
G
D
D
Dpin 1
SuperSOT TM-8
54
63
72
81
Absolute Maximum Ratings TA = 25oC unless otherwise noted
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Draint Current - Continuous
- Pulsed
(Note 1a)
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient (Note 1a)
Thermal Resistance, Junction-to-Case (Note 1)
© 1998 Fairchild Semiconductor Corporation
FDR4410
30
±20
9.3
40
1.8
1
0.9
-55 to 150
70
20
Units
V
V
A
W
°C
°C/W
°C/W
FDR4410 Rev.C
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet FDR4410.PDF ] | |
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