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PDF FDP8870 Data sheet ( Hoja de datos )

Número de pieza FDP8870
Descripción N-Channel PowerTrench MOSFET 30V/ 156A/ 4.1m
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDP8870 Hoja de datos, Descripción, Manual

November 2004
FDP8870
N-Channel PowerTrench® MOSFET
30V, 156A, 4.1m
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(ON) and fast switching speed.
Applications
• DC/DC converters
Features
• rDS(ON) = 4.1m, VGS = 10V, ID = 35A
• rDS(ON) = 4.6m, VGS = 4.5V, ID = 35A
• High performance trench technology for extremely low
rDS(ON)
• Low gate charge
• High power and current handling capability
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
G
TO-220AB
FDP SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V) (Note 1)
Continuous (TC = 25oC, VGS = 4.5V) (Note 1)
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 62oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 2)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
Thermal Resistance Junction to Case TO-220
Thermal Resistance Junction to Ambient TO-220 ( Note 3)
Package Marking and Ordering Information
Device Marking
FDP8870
FDP8870
Device
FDP8870
FDP8870_NL (Note 4)
Package
TO-220AB
TO-220AB
Reel Size
Tube
Tube
D
S
Ratings
30
±20
156
147
19
Figure 4
300
160
1.07
-55 to 175
0.94
62
Units
V
V
A
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
Tape Width
N/A
N/A
Quantity
50 units
50 units
©2004 Fairchild Semiconductor Corporation
FDP8870 Rev. A2

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FDP8870 pdf
Typical Characteristics TC = 25°C unless otherwise noted
1.4 1.2
VGS = VDS, ID = 250µA
ID = 250µA
1.2
1.1
1.0
0.8
0.6
0.4
-80
-40 0
40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
1.0
0.9
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10000
CISS = CGS + CGD
10
VDD = 15V
8
CRSS = CGD
COSS CDS + CGD
1000
VGS = 0V, f = 1MHz
400
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 13. Capacitance vs Drain to Source
Voltage
6
4
WAVEFORMS IN
2 DESCENDING ORDER:
ID = 35A
ID = 5A
0
0 20 40 60 80 100
Qg, GATE CHARGE (nC)
Figure 14. Gate Charge Waveforms for Constant
Gate Current
©2004 Fairchild Semiconductor Corporation
FDP8870 Rev. A2

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