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PDF FDP038AN06A0 Data sheet ( Hoja de datos )
| Número de pieza | FDP038AN06A0 | |
| Descripción | N-Channel PowerTrench MOSFET 60V/ 80A/ 3.8m | |
| Fabricantes | Fairchild Semiconductor | |
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August 2002
FDP038AN06A0 / FDI038AN06A0
N-Channel PowerTrench® MOSFET
60V, 80A, 3.8mΩ
Features
• rDS(ON) = 3.5mΩ (Typ.), VGS = 10V, ID = 80A
• Qg(tot) = 95nC (Typ.), VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 82584
Applications
• Motor / Body Load Control
• ABS Systems
• Powertrain Management
• Injection Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 12V and 24V systems
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
SOURCE
DRAIN
GATE
TO-220AB
FDP SERIES
DRAIN
(FLANGE)
TO-262AB
FDI SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC < 151oC, VGS = 10V)
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 62oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
Thermal Resistance Junction to Case TO-220, TO-262
Thermal Resistance Junction to Ambient TO-220, TO-262 (Note 2)
D
G
S
Ratings
60
±20
80
17
Figure 4
625
310
2.07
-55 to 175
0.48
62
Units
V
V
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive
industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality
systems certification.
©2002 Fairchild Semiconductor Corporation
FDP038AN06A0 / FDI038AN06A0 Rev. A1
1 page  
Typical Characteristics TC = 25°C unless otherwise noted
1.4
VGS = VDS, ID = 250µA
1.2
1.0
0.8
0.6
0.4
0.2
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
1.2
ID = 250µA
1.1
1.0
0.9
-80
-40 0
40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10000
COSS ≅ CDS + CGD
1000
CRSS = CGD
CISS = CGS + CGD
100
0.1
VGS = 0V, f = 1MHz
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
60
Figure 13. Capacitance vs Drain to Source
Voltage
10
VDD = 30V
8
6
4
WAVEFORMS IN
2 DESCENDING ORDER:
ID = 80A
ID = 40A
0
0 25 50 75 100
Qg, GATE CHARGE (nC)
Figure 14. Gate Charge Waveforms for Constant
Gate Current
©2002 Fairchild Semiconductor Corporation
FDP038AN06A0 / FDI038AN06A0 Rev. A1
5 Page | ||
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| PDF Descargar | [ Datasheet FDP038AN06A0.PDF ] | |
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