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Número de pieza | FDJ1027P | |
Descripción | P-Channel 1.8V Specified PowerTrench MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDJ1027P (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! November 2004
FDJ1027P
P-Channel 1.8V Specified PowerTrench® MOSFET
General Description
This dual P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
Packaged in FLMP SC75, the RDS(ON) and thermal
properties of the device are optimized for battery power
management applications.
Applications
• Battery management/Charger Application
• Load switch
Features
• –2.8 A, –20 V RDS(ON) = 160 mΩ @ VGS = –4.5 V
RDS(ON) = 230 mΩ @ VGS = –2.5 V
RDS(ON) = 390 mΩ @ VGS = –1.8 V
• Low gate charge, High Power and Current handling
capability
• High performance trench technology for extremely
low RDS(ON)
• FLMP SC75 package: Enhanced thermal
performance in industry-standard package size
S2
S1
G1
G2
S2
S1
Bottom Drain Contact
43
52
61
Bottom Drain Contact
MOSFET Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, Tstg
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJC Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
.G
FDJ1027P
7’’
Ratings
–20
±8
–2.8
–12
1.5
0.9
–55 to +150
80
5
8mm
Units
V
V
A
°C
°C/W
3000 units
2004 Fairchild Semiconductor Corporation
FDJ1027P Rev C1 (W)
1 page Typical Characteristics
10
VGS=-4.5V
8
-3.5V
6
-3.0V
-2.5V
4
-2.0V
-1.8V
2
0
012345
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.5
1.4 ID = -2.8A
VGS = -4.5V
1.3
1.2
1.1
1
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
5
VDS = -5V
4
3
TA = -55oC
25oC
125oC
2
1
0
0.5
1 1.5 2
-VGS, GATE TO SOURCE VOLTAGE (V)
2.5
Figure 5. Transfer Characteristics.
2.6
2.4
VGS=-1.8V
2.2
2
-2.0V
1.8
1.6
-2.5V
1.4
-3.0V
1.2
-3.5V
-4.0V
1
0.8
0
2468
-ID, DRAIN CURRENT (A)
-4.5V
10
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.5
ID = -1.4A
0.44
0.38
0.32
0.26
TA = 125oC
0.2
0.14
0.08
1.5
TA = 25oC
2 2.5 3 3.5 4
-VGS, GATE TO SOURCE VOLTAGE (V)
4.5
5
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS=0V
10
1
0.1
0.01
0.001
TA = 125oC
25oC
-55oC
0.0001
0
0.2 0.4 0.6 0.8
1
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDJ1027P Rev C (W)
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet FDJ1027P.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDJ1027P | P-Channel 1.8V Specified PowerTrench MOSFET | Fairchild Semiconductor |
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