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PDF FDH44N50 Data sheet ( Hoja de datos )
| Número de pieza | FDH44N50 | |
| Descripción | N-Channel SMPS Power MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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FDH44N50
N-Channel SMPS Power MOSFET
500 V, 44 A, 120 mΩ
December 2013
Features
• Low Gate Charge Qg Results in Simple Drive Requirement
(Typ. 90 nC)
• Improved Gate, Avalanche and High Reapplied dv/dt
Ruggedness
• Reduced RDS(on) (110 mΩ (Typ.) @ VGS = 10 V, ID = 22 A)
• Reduced Miller Capacitance and Low Input Capacitance
(Typ. Crss = 40 pF)
• Improved Switching Speed with Low EMI
• 175oC Rated Junction Temperature
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high
voltage MOSFET family based on planar stripe and DMOS
technology. This MOSFET is tailored to reduce on-state
resistance, and to provide better switching performance and
higher avalanche energy strength. This device family is
suitable for switching power converter applications such as
power factor correction (PFC), flat panel display (FPD) TV
power, ATX and electronic lamp ballasts.
Applications
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
D
G
D
S
TO-247
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDSS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10 V)
Continuous (TC = 100oC, VGS = 10 V)
Pulsed1
Power Dissipation
Derate Above 25oC
Operating and Storage Temperature
Soldering Temperature for 10 Seconds
Mounting Torque, 8-32 or M3 Screw
FDH44N50
500
±30
44
32
176
750
5
-55 to 175
300 (1.6mm from case)
10ibf*in (1.1N*m)
Thermal Characteristics
+θ
+θ
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FDH44N50
0.2
40
Unit
V
V
A
A
A
W
W/oC
oC
oC
6?
6?
©2002 Fairchild Semiconductor Corporation
FDH44N50 Rev. C1
1
www.fairchildsemi.com
1 page  
Test Circuits and Waveforms
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01Ω
Figure 11. Unclamped Energy Test Circuit
tP
IAS
BVDSS
VDS
VDD
0
tAV
Figure 12. Unclamped Energy Waveforms
VGS
Ig(REF)
VDS
RL
DUT
+
VDD
-
Figure 13. Gate Charge Test Circuit
VDD
Qg(TOT)
VDS
VGS = 10V
VGS
VGS = 1V
0 Qg(TH)
Qgs
Ig(REF)
0
Qgd
Figure 14. Gate Charge Waveforms
VDS
RL
VGS
RGS
DUT
+
VDD
-
VGS
Figure 15. Switching Time Test Circuit
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
10%
VGS
10%
0
50%
PULSE WIDTH
90%
50%
Figure 16. Switching Time Waveform
©2002 Fairchild Semiconductor Corporation
FDH44N50 Rev. C1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDH44N50.PDF ] | |
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