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Número de pieza | FDG6332C | |
Descripción | 20V N & P-Channel PowerTrench MOSFETs | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
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No Preview Available ! September 2003
FDG6332C
20V N & P-Channel PowerTrench® MOSFETs
General Description
The N & P-Channel MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior
switching performance.
These devices have been designed to offer
exceptional power dissipation in a very small footprint
for applications where the bigger more expensive
TSSOP-8 and SSOP-6 packages are impractical.
Applications
• DC/DC converter
• Load switch
• LCD display inverter
Features
• Q1 0.7 A, 20V.
RDS(ON) = 300 mΩ @ VGS = 4.5 V
RDS(ON) = 400 mΩ @ VGS = 2.5 V
• Q2 –0.6 A, –20V.
RDS(ON) = 420 mΩ @ VGS = –4.5 V
RDS(ON) = 630 mΩ @ VGS = –2.5 V
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
• SC70-6 package: small footprint (51% smaller than
SSOT-6); low profile (1mm thick)
S
G
D
Pin 1
D
G
S
SC70-6
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1)
– Pulsed
Power Dissipation for Single Operation
(Note 1)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.32
FDG6332C
7’’
16
25
34
Complementary
Q1 Q2
20 –20
±12 ±12
0.7 –0.6
2.1 –2
0.3
–55 to +150
Units
V
V
A
W
°C
415 °C/W
Tape width
8mm
Quantity
3000 units
©2003 Fairchild Semiconductor Corporation
FDG6332C Rev C2 (W)
1 page Typical Characteristics: N-Channel
5
ID = 0.7A
4
3
VDS = 5V
10V
15V
2
1
0
0 0.4 0.8 1.2
Qg, GATE CHARGE (nC)
1.6
Figure 7. Gate Charge Characteristics.
10
RDS(ON) LIMIT
1
VGS = 4.5V
0.1 SINGLE PULSE
RθJA = 415oC/W
TA = 25oC
100µs
1ms
10ms
100ms
1s
DC
0.01
0.1
1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
200
150
CISS
100
f = 1MHz
VGS = 0 V
COSS
50
CRSS
0
0
5 10 15
VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics.
10
SINGLE PULSE
RθJA = 415°C/W
8 TA = 25°C
6
4
2
0
0.001
0.01
0.1 1
t1, TIME (sec)
10 100
Figure 10. Single Pulse Maximum
Power Dissipation.
FDG6332C Rev C2 (W)
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet FDG6332C.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDG6332C | 20V N & P-Channel PowerTrench MOSFETs | Fairchild Semiconductor |
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