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PDF FDG6322C Data sheet ( Hoja de datos )
| Número de pieza | FDG6322C | |
| Descripción | Dual N & P Channel Digital FET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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February 1998
FDG6322C
Dual N & P Channel Digital FET
General Description
These dual N & P-Channel logic level enhancement mode
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance. This device has been designed
especially for low voltage applications as a replacement for
bipolar digital transistors and small signal MOSFETs. Since
bias resistors are not required, this dual digital FET can
replace several different digital transistors, with different bias
resistor values.
Features
N-Ch 0.22 A, 25 V, RDS(ON) = 4.0 Ω @ VGS= 4.5 V,
RDS(ON) = 5.0 Ω @ VGS= 2.7 V.
P-Ch -0.41 A,-25V, RDS(ON) = 1.1 Ω @ VGS= -4.5V,
RDS(ON) = 1.5 Ω @ VGS= -2.7V.
Very small package outline SC70-6.
Very low level gate drive requirements allowing direct
operation in 3 V circuits (VGS(th) < 1.5 V).
Gate-Source Zener for ESD ruggedness
(>6kV Human Body Model).
SC70-6
SOT-23
SuperSOTTM-6
SOT-8
SO-8
SOIC-14
S2
G2
D1
pin 1
SC70-6
Mark: .22
D2
G1
S1
16
Q1
25
Q2
34
Absolute Maximum Ratings TA = 25oC unless other wise noted
Symbol Parameter
N-Channel
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
25
8
0.22
0.65
PD
TJ,TSTG
ESD
Maximum Power Dissipation
(Note 1)
Operating and Storage Temperature Range
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient (Note1)
0.3
-55 to 150
6
415
P-Channel
-25
-8
-0.41
-1.2
© 1998 Fairchild Semiconductor Corporation
Units
V
V
A
W
°C
kV
°C/W
FDG6322C Rev.F
1 page  
Typical Electrical Characteristics: N-Channel (continued)
6
I D = 0.22A
5
4
3
2
1
0
0 0.1
VDS = 5V
10V
0.2 0.3 0.4
Q g , GATE CHARGE (nC)
0.5
Figure 7. Gate Charge Characteristics.
0.6
30
15
Ciss
8
Coss
5
Crss
3 f = 1 MHz
VGS = 0 V
2
0.1 0.3
13
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
25
Figure 8. Capacitance Characteristics.
1
0.3 RDS(ON) LIMIT
10ms
100ms
0.1
V GS = 4.5V
0.03 SINGLE PULSE
RθJA = 415 °C/W
TA = 25°C
1s
10s
DC
0.01
0.4
0.8
2
5 10
25
VDS , DRAIN-SOURCE VOLTAGE (V)
40
Figure 9. Maximum Safe Operating Area.
50
SINGLE PULSE
40 RθJA=415°C/W
TA= 25°C
30
20
10
0
0.0001
0.001
0.01 0.1
1
SINGLE PULSE TIME (SEC)
10
200
Figure 10. Single Pulse Maximum Power
Dissipation.
FDG6322C Rev.F
5 Page 
SC70-6 Tape and Reel Data and Package Dimensions, continued
SC70-6 (FS PKG Code 76)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0055
September 1998, Rev. A1
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet FDG6322C.PDF ] | |
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