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PDF FDG6321 Data sheet ( Hoja de datos )
| Número de pieza | FDG6321 | |
| Descripción | Dual N & P Channel Digital FET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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November 1998
FDG6321C
Dual N & P Channel Digital FET
General Description
These dual N & P-Channel logic level enhancement mode field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
This device has been designed especially for low voltage
applications as a replacement for bipolar digital transistors and
small signal MOSFETS. Since bias resistors are not required,
this dual digital FET can replace several different digital
transistors, with different bias resistor values.
Features
N-Ch 0.50 A, 25 V, RDS(ON) = 0.45 Ω @ VGS= 4.5V.
RDS(ON) = 0.60 Ω @ VGS= 2.7 V.
P-Ch -0.41 A, -25 V,RDS(ON) = 1.1 Ω @ VGS= -4.5V.
RDS(ON) = 1.5 Ω @ VGS= -2.7V.
Very small package outline SC70-6.
Very low level gate drive requirements allowing direct
operation in 3 V circuits(VGS(th) < 1.5 V).
Gate-Source Zener for ESD ruggedness
(>6kV Human Body Model).
SC70-6
SOT-23
SuperSOTTM-6
SOT-8
SO-8
SOIC-14
S2
G2
D1 .21
SC70-6
D2
G1
S1
16
25
34
Absolute Maximum Ratings TA = 25oC unless otherwise noted
Symbol Parameter
N-Channel
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
25
8
0.5
1.5
PD
TJ,TSTG
ESD
Maximum Power Dissipation
(Note 1)
Operating and Storage Temperature Ranger
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1)
0.3
-55 to 150
6
415
P-Channel
-25
-8
-0.41
-1.2
Units
V
V
A
W
°C
kV
°C/W
© 1998 Fairchild Semiconductor Corporation
FDG6321C Rev. D
1 page  
Typical Electrical Characteristics: N-Channel (continued)
5
ID = 0.5A
4
VDS = 5V
10V
15V
3
2
1
0
0 0.4 0.8 1.2 1.6
Qg , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
2
200
70
Ciss
30
Coss
10
f = 1 MHz
VGS = 0V
Crss
3
0.1 0.3
12
5 10
25
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
3
1
0.5
0.2
0.1
0.05
0.02
0.01
0.1
RDS(ON) LIMIT
VGS = 4.5V
SINGLE PULSE
RθJA = 415 °C/W
TA= 25°C
1s
10s
DC
1ms
10ms
100ms
12
5 10
V , DRAI N-SOURCE VOLTAGE (V)
DS
25
40
Figure 9. Maximum Safe Operating Area.
50
SINGLE PULSE
40 RθJA=415°C/W
TA= 25°C
30
20
10
0
0.0001
0.001
0.01 0.1
1
SINGLE PULSE TIME (SEC)
10
200
Figure 10. Single Pulse Maximum Power
Dissipation.
FDG6321C Rev. D
5 Page 
SC70-6 Tape and Reel Data and Package Dimensions, continued
SC70-6 (FS PKG Code 76)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0055
September 1998, Rev. A1
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet FDG6321.PDF ] | |
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