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PDF FDD8878 Data sheet ( Hoja de datos )
| Número de pieza | FDD8878 | |
| Descripción | N-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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January 2005
FDD8878 / FDU8878
N-Channel PowerTrench® MOSFET
30V, 40A, 15mΩ
Features
rDS(ON) = 15mΩ, VGS = 10V, ID = 35A
rDS(ON) = 18.5mΩ, VGS = 4.5V, ID = 35A
High performance trench technology for extremely low
rDS(ON)
Low gate charge
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(ON) and fast switching speed.
High power and current handling capability
Applications
DC/DC converters
D
G
S
DTO-P-2A5K2
(TO-252)
GDS
I-PAK
(TO-251AA)
D
G
S
©2005 Fairchild Semiconductor Corporation
FDD8878 / FDU8878 Rev. A3
1
www.fairchildsemi.com
1 page  
Typical Characteristics TC = 25°C unless otherwise noted
1000
100
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
10µs
500
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
100
10 100µs
1
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
0.1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
1ms
10ms
DC
60
Figure 5. Forward Bias Safe Operating Area
STARTING TJ = 25oC
10
STARTING TJ = 150oC
1
0.01
0.1 1
tAV, TIME IN AVALANCHE (ms)
10
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
80
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
60
TJ = 25oC
40
20
TJ = 175oC
TJ = -55oC
0
1.5 2.0 2.5 3.0 3.5
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
4.0
80
VGS = 5V
60
VGS = 10V
40
VGS = 4V
VGS = 3V
20
0
0
TC = 25oC
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0.25 0.5 0.75 1.0 1.25
VDS , DRAIN TO SOURCE VOLTAGE (V)
1.5
Figure 8. Saturation Characteristics
30
ID = 35A
25
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
20
15 ID = 1A
10
2
468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 9. Drain to Source On Resistance vs Gate
Voltage and Drain Current
1.8
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.6
1.4
1.2
1.0
0.8
0.6
-80
VGS = 10V, ID = 35A
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
©2005 Fairchild Semiconductor Corporation
FDD8878 / FDU8878 Rev. A3
5
www.fairchildsemi.com
5 Page 
PSPICE Thermal Model
REV 23 February 2004
FDD8878T
CTHERM1 TH 6 3.5e-4
CTHERM2 6 5 5e-4
CTHERM3 5 4 2.5e-3
CTHERM4 4 3 2.7e-3
CTHERM5 3 2 5e-3
CTHERM6 2 TL 1e-2
RTHERM1 TH 6 2.9e-1
RTHERM2 6 5 3.5e-1
RTHERM3 5 4 4.5e-1
RTHERM4 4 3 5.2e-1
RTHERM5 3 2 6.9e-1
RTHERM6 2 TL 7e-1
SABER Thermal Model
SABER thermal model FDD8878T
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 =3.5e-4
ctherm.ctherm2 6 5 =5e-4
ctherm.ctherm3 5 4 =2.5e-3
ctherm.ctherm4 4 3 =2.7e-3
ctherm.ctherm5 3 2 =5e-3
ctherm.ctherm6 2 tl =1e-2
rtherm.rtherm1 th 6 =2.9e-1
rtherm.rtherm2 6 5 =3.5e-1
rtherm.rtherm3 5 4 =4.5e-1
rtherm.rtherm4 4 3 =5.2e-1
rtherm.rtherm5 3 2 =6.9e-1
rtherm.rtherm6 2 tl =7e-1
}
th JUNCTION
RTHERM1
RTHERM2
6
5
RTHERM3
RTHERM4
4
RTHERM5
3
RTHERM6
2
CTHERM1
CTHERM2
CTHERM3
CTHERM4
CTHERM5
CTHERM6
tl CASE
©2005 Fairchild Semiconductor Corporation
FDD8878 / FDU8878 Rev. A3
11
www.fairchildsemi.com
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet FDD8878.PDF ] | |
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