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PDF FDD7030 Data sheet ( Hoja de datos )

Número de pieza FDD7030
Descripción 30V N-Channel PowerTrench MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDD7030 Hoja de datos, Descripción, Manual

June 2003
FDD7030BL/FDU7030BL
30V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) , fast switching speed and
extremely low RDS(ON) in a small package.
Applications
DC/DC converter
Motor Drives
Features
56 A, 30 V
RDS(ON) = 9.5 m@ VGS = 10 V
RDS(ON) = 13 m@ VGS = 4.5 V
Low gate charge
Fast Switching
High performance trench technology for extremely
low RDS(ON)
D
G
S
DTO-P-2A5K2
(TO-252)
GDS
I-PAK
(TO-251AA)
D
G
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
Pulsed
(Note 1a)
Power Dissipation
@TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
@TA=25°C
(Note 1b)
Operating and Storage Junction Temperature Range
Ratings
30
±20
56
14
100
60
2.8
1.3
–55 to +175
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
RθJA
(Note 1)
(Note 1a)
(Note 1b)
2.5
45
96
Package Marking and Ordering Information
Device Marking
Device
Package
FDD7030BL
FDD7030BL
D-PAK (TO-252)
FDU7030BL
FDU7030BL
I-PAK (TO-251)
Reel Size
13’’
Tube
Tape width
12mm
N/A
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
75
©2003 Fairchild Semiconductor Corp.
FDD7030BL/FDU7030BL Rev CW)

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FDD7030 pdf
Typical Characteristics
10
ID = 14A
8
6
VDS = 10V
15V
20V
4
2
0
0 5 10 15 20 25 30
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
1000
100
RDS(ON) LIMIT
10
1
VGS = 10V
SINGLE PULSE
0.1 RθJA = 96oC/W
TA = 25oC
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.01 0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area
2000
f = 1MHz
VGS = 0 V
1600
CISS
1200
800
400
0
0
COSS
CRSS
5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics
100
80
60
40
20
0
0.01
0.1
SINGLE PULSE
RθJA = 96°C/W
TA = 25°C
1 10
t1, TIME (sec)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.0
SINGLE PULSE
RθJA(t) = r(t) * RθJA
RθJA = 96 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.001
0.01
0.1 1 10
t1, TIME (sec)
100 1000
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD7030BL/FDU7030BL Rev. B(W)

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