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PDF FDD3670 Data sheet ( Hoja de datos )

Número de pieza FDD3670
Descripción 100V N-Channel PowerTrench MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDD3670 Hoja de datos, Descripción, Manual

January 2000
ADVANCE INFORMATION
FDD3670
100V N-Channel PowerTrenchMOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
34 A, 100 V. RDS(ON) = 0.030 @ VGS = 10 V
RDS(ON) = 0.033 @ VGS = 6 V
Low gate charge (57 nC typical)
Fast switching speed
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability.
D
G
S
TO-252
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
Drain Current – Pulsed
(Note 1)
PD
TJ, TSTG
Maximum Power Dissipation @ TC = 25°C (Note 1)
@ TA = 25°C (Note 1a)
@ TA = 25°C (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD3670
FDD3670
13’’
D
G
S
Ratings
100
±20
34
100
70
3.2
1.3
-55 to +150
1.8
96
Tape width
16mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
2000 Fairchild Semiconductor Corporation
FDD3670 Rev A(W)

1 page




FDD3670 pdf
TO-252 Tape and Reel Data and Package Dimensions
TO-252 (FS PKG Code AA)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.300
September 1999, Rev. A

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