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PDF FDB8870 Data sheet ( Hoja de datos )
| Número de pieza | FDB8870 | |
| Descripción | N-Channel PowerTrench MOSFET 30V/ 160A/ 3.9mW | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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September 2004
FDB8870
N-Channel PowerTrench® MOSFET
30V, 160A, 3.9m Ω
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(ON) and fast switching speed.
Applications
• DC/DC converters
Features
• rDS(ON) = 3.9mΩ, VGS = 10 V, ID = 35A
• rDS(ON) = 4.4mΩ, VGS = 4. 5V, ID = 35A
• High performance trench technology for extremely low
rDS(ON)
• Low gate charge
• High power and current handling capability
GATE
D
SOURCE
TO-263AB
FDB SERIES
DRAIN
(FLANGE)
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, V GS = 10V) (Note 1)
Continuous (TC = 25oC, V GS = 4.5V) (Note 1)
Continuous (Tamb = 25oC, VGS = 10 V, with RθJA = 43oC/W)
Pulsed
EAS Single Pulse Avalanche Energy (Note 2)
Power dissipation
PD Derate above 25oC
TJ, T STG
Operating and Storage Temperature
Ratings
30
±20
160
150
23
Figure 4
300
160
1.07
-55 to 175
Units
V
V
A
A
A
A
mJ
W
W/oC
oC
Thermal Characteristics
Rθ JC
Rθ JA
Rθ JA
Thermal Resistance Junction to Case TO-263
Thermal Resistance Junction to Ambient TO-263 ( Note 3)
Thermal Resistance Junction to Ambient TO-263, 1in 2 copper pad area
0.94
62
43
oC/W
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
FDB8870
Device
FDB8870
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
©2004 Fairchild Semiconductor Corporation
FDB8870 Rev. A1
1 page  
Typical Characteristics TC = 25°C unless otherwise noted
1.4 1.2
VGS = V D S, ID = 250µA
ID = 250µA
1.2
1.1
1.0
0.8
0.6
0.4
-80
-40 0
40 80 120 160
TJ, JUNCTION TEMPERATURE ( oC)
200
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
1.0
0.9
-80
-40 0 40 80 120 160
TJ , JUNCTION TEMPERATURE (oC)
200
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10000
CISS = CGS + CGD
10
VDD = 15V
8
CRSS = CGD
COSS ≅ CDS + CGD
1000
VGS = 0V, f = 1MHz
400
0.1 1
10
VD S, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 13. Capacitance vs Drain to Source
Voltage
6
4
WAVEFORMS IN
2 DESCENDING ORDER:
I D = 35A
ID = 5A
0
0 20 40 60 80 100
Qg, GATE CHARGE (nC)
Figure 14. Gate Charge Waveforms for Constant
Gate Current
©2004 Fairchild Semiconductor Corporation
FDB8870 Rev. A1
5 Page 
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
FAST
ISOPLANAR™
Power247™
Stealth™
ActiveArray™ FASTr™
LittleFET™
POWEREDGE™
SuperFET™
Bottomless™ FPS™
MICROCOUPLER™ PowerSaver™
SuperSOT™-3
CoolFET™
FRFET™
MicroFET™
PowerTrench
SuperSOT™-6
CROSSVOLT™ GlobalOptoisolator™ MicroPak™
QFET
SuperSOT™-8
DOME™
GTO™
MICROWIRE™
QS™
SyncFET™
EcoSPARK™ HiSeC™
MSX™
QT Optoelectronics™ TinyLogic
E2CMOS™
I2C™
MSXPro™
Quiet Series™
TINYOPTO™
EnSigna™
i-Lo™
OCX™
RapidConfigure™
TruTranslation™
FACT™
ImpliedDisconnect™ OCXPro™
FACT Quiet Series™
OPTOLOGIC
RapidConnect™
µSerDes™
UHC™
UltraFET
Across the board. Around the world.™ OPTOPLANAR™
The Power Franchise
PACMAN™
Programmable Active Droop™
POP™
SILENT SWITCHER VCX™
SMART START™
SPM™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TOANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANY LIABILITY
ARISING OUT OF THEAPPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEYANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTENAPPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
effectiveness.
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I12
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet FDB8870.PDF ] | |
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