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PDF FDB6676S Data sheet ( Hoja de datos )
| Número de pieza | FDB6676S | |
| Descripción | 30V N-Channel PowerTrench SyncFET | |
| Fabricantes | Fairchild Semiconductor | |
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October 2001
FDP6676S / FDB6676S
30V N-Channel PowerTrench SyncFET™
General Description
This MOSFET is designed to replace a single MOSFET
and parallel Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDP/B6676S
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDP/B6676S as the low-side switch in a
synchronous rectifier is indistinguishable from the
performance of the FDP/B6676 in parallel with a
Schottky diode.
Features
• 38 A, 30 V.
RDS(ON) = 6.5 mΩ @ VGS = 10 V
RDS(ON) = 8.0 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (40nC typical)
• High performance trench technology for extremely
low RDS(ON) and fast switching
• High power and current handling capability
•
DD
G
D
S
TO-220
FDP Series
G
S
TO-263AB
FDB Series
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1)
(Note 1)
PD
TJ, TSTG
TL
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDB6676S
FDB6676S
13’’
FDP6676S
FDP6676S
Tube
Ratings
30
±16
76
150
70
0.56
–55 to +150
275
1.8
55
Tape width
24mm
n/a
S
Units
V
V
A
W
W/°C
°C
°C
°C/W
°C/W
Quantity
800
45
2001 Fairchild Semiconductor Corporation
FDP6676S/FDB6676S Rev. C (W)
1 page  
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
FDP6676S.
Time : 12.5ns/div
Figure 12. FDP6676S SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDP6676).
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
0.1
TA = 100oC
0.01
0.001
0.0001
TA = 25oC
0.00001
0
10 20
VDS, REVERSE VOLTAGE (V)
30
Figure 14. SyncFET diode reverse leakage
versus drain-source voltage and
temperature.
Time : 12.5ns/div
Figure 13. Non-SyncFET (FDP6676) body
diode reverse recovery characteristic.
FDP6676S/FDB6676S Rev C (W)
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDB6676S.PDF ] | |
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