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PDF FDB045AN08A0 Data sheet ( Hoja de datos )
| Número de pieza | FDB045AN08A0 | |
| Descripción | N-Channel UltraFET Trench MOSFET 75V/ 80A/ 4.5m | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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April 2002
FDB045AN08A0
N-Channel UltraFET® Trench MOSFET
75V, 80A, 4.5mΩ
Features
• rDS(ON) = 3.9mΩ (Typ.), VGS = 10V, ID = 80A
• Qg(tot) = 92nC (Typ.), VGS = 10V
• Low Miller Charge
• Low Qrr Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 82684
Applications
• 42V Automotive Load Control
• Starter / Alternator Systems
• Electronic Power Steering Systems
• Electronic Valve Train Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V systems
GATE
D
SOURCE
TO-263AB
FDB SERIES
DRAIN
(FLANGE)
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC < 145oC, VGS = 10V)
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
G
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-263
Thermal Resistance Junction to Ambient TO-263 (Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
S
Ratings
75
±20
80
19
Figure 4
600
310
2.0
-55 to 175
0.48
62
43
Units
V
V
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
oC/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2002 Fairchild Semiconductor Corporation
FDB045AN08A0 Rev. A
1 page  
Typical Characteristics TC = 25°C unless otherwise noted
1.2 1.15
VGS = VDS, ID = 250µA
ID = 250µA
1.10
1.0
1.05
0.8
1.00
0.6
0.95
0.4
-80
-40 0
40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
0.90
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10000
COSS ≅ CDS + CGD
1000
CRSS = CGD
CISS = CGS + CGD
100
0.1
VGS = 0V, f = 1MHz
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
75
Figure 13. Capacitance vs Drain to Source
Voltage
10
VDD = 40V
8
6
4
WAVEFORMS IN
2 DESCENDING ORDER:
ID = 80A
ID = 10A
0
0 25 50 75 100
Qg, GATE CHARGE (nC)
Figure 14. Gate Charge Waveforms for Constant
Gate Currents
©2002 Fairchild Semiconductor Corporation
FDB045AN08A0 Rev. A
5 Page 
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
FASTr™
FRFET™
GlobalOptoisolator™
OPTOPLANAR™
PACMAN™
POP™
STAR*POWER™
Stealth™
SuperSOT™-3
CROSSVOLT™
DenseTrench™
DOME™
GTO™
HiSeC™
I2C™
Power247™
PowerTrench®
QFET™
SuperSOT™-6
SuperSOT™-8
SyncFET™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER®
TinyLogic™
TruTranslation™
UHC™
UltraFET®
FACT Quiet Series™ MICROWIRE™
FAST®
OPTOLOGIC®
SMART START™
SPM™
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
2. A critical component is any component of a life support
1. Life support devices or systems are devices or systems device or system whose failure to perform can be
which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support
or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness.
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
Preliminary
First Production
No Identification Needed
Full Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
FDB045AN08A0 Rev. H5
11 Page | ||
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