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PDF FCP11N60 Data sheet ( Hoja de datos )
| Número de pieza | FCP11N60 | |
| Descripción | SuperFET MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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FCP11N60/FCPF11N60
March 2014
General Description
SuperFET® MOSFET is Fairchild Semiconductor’s first
genera-tion of high voltage super-junction (SJ) MOSFET
family that is utilizing charge balance technology for
outstanding low on-resistance and lower gate charge
performance. This technology is tailored to minimize
conduction loss, provide superior switch-ing performance,
dv/dt rate and higher avalanche energy. Con-sequently,
SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power,
FPD TV power, ATX power and industrial power
applications.
Features
• 650V @Tj = 150°C
• Typ. Rds(on)=0.32Ω
• Ultra low gate charge (typ. Qg=40nC)
• Low effective output capacitance (typ. Coss.eff=95pF)
• 100% avalanche tested
• RoHS Compliant
D
GDS
TO-220
GDS TO-220F
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction termperature
FCP11N60 FCPF11N60
11 11*
7 7*
33 33*
± 30
340
11
12.5
4.5
125 36
1.0 0.29
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
FCP11N60
1.0
0.5
62.5
FCPF11N60
3.5
--
62.5
Units
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2008 Fairchild Semiconductor Corporation
FCP11N60/FCPF11N60 Rev. C0
1
www.fairchildsemi.com
1 page  
Typical Characteristics (Continued)
100
D =0.5
0.2
1 0 -1
0.1
0.05
0.02
0.01
single pu lse
1 0 -2
* N otes :
1. Z θJC(t) = 1 .0 oC /W M a x.
2. D uty F a cto r, D = t1/t2
3. TJM - TC = P DM * ZθJC(t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S quare W ave P ulse D uration [sec]
Figure 11-1. Transient Thermal Response Curve for FCP11N60
D =0.5
100
0.2
0.1
0.05
1 0 -1
0.02
0.01
single pulse
1 0 -2
* N otes :
1 . Z θJC(t) = 3 .5 oC /W M ax.
2 . D uty F ac tor, D = t1/t2
3 . T JM - T C = P DM * Z θJC(t)
PDM
t1
t2
1 0 -5
1 0 -4
10 -3
10 -2
1 0 -1
100
t1, S q u are W a ve P u lse D uration [se c]
101
Figure 11-2. Transient Thermal Response Curve for FCPF11N60
©2008 Fairchild Semiconductor Corporation
FCP11N60/FCPF11N60 Rev. C0
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FCP11N60.PDF ] | |
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