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PDF FCD4B14CC Data sheet ( Hoja de datos )

Número de pieza FCD4B14CC
Descripción Thermal Fingerprint Sensor with 0.4 mm x 14 mm Sensing Area and Digital Output
Fabricantes ATMEL Corporation 
Logotipo ATMEL Corporation Logotipo



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Features
Sensitive Layer Over a 0.8 µm CMOS Array
Image Zone: 0.4 x 14 mm = 0.02" x 0.55"
Image Array: 8 x 280 = 2240 pixels
Pixel Pitch: 50 µm x 50 µm = 500 dpi
Pixel Clock: up to 2 MHz Enabling up to 1780 Frames per Second
Die Size: 1.7 x 17.3 mm
Operating Voltage: 3V to 5.5V
Naturally Protected Against ESD: > 16 kV Air Discharge
Power Consumption: 20 mW at 3.3V, 1 MHz, 25°C
Operating Temperature Range: 0°C to +70°C: C suffix
Resistant to Abrasion: >1 Million Finger Sweeps
Chip-On-Board (COB) package or 20-lead Ceramic DIP available for development, with
Specific Protective Layer
Applications
PDA (Access Control, Data Protection)
Cellular Phones, SmartPhone (Access e-business)
Notebook, PC-add on (Access Control, e-business)
PIN Code Replacement
Automated Teller Machine, POS
Building Access
Electronic Keys (Cars, Home,...)
Portable Fingerprint Imaging for Law Enforcement
TV Access
Figure 1. Fingerchip Packages
Step for easy
integration
Sensing area
Wire protection
(not drawn)
Chip-on-Board Package
(COB)
Thermal
Fingerprint
Sensor with
0.4 mm x 14 mm
(0.02" x 0.55")
Sensing Area
and
Digital Output
(On-chip ADC)
FCD4B14
FingerChip
20-pin, 0.3" Dual-Inline
Ceramic Package
(DIP20)
Rev. 1962C01/02
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FCD4B14CC pdf
FCD4B14
Table 5. Resistance
Parameter
ESD
On pins. HBM (Human Body Model) CMOS I/O
On die surface (Zapgun)
Air discharge
MECHANICAL ABRASION
Number of cycles without lubricant multiply by a
factor of 20 for correlation with a real finger
CHEMICAL RESISTANCE
Cleaning agent, acid, grease, alcohol, diluted
acetone
Min Value
2 kV
±16 kV
200 000
4 hours
Standard Method
MIL-STD-883- method 3015.7
NF EN 6100-4-2
MIL E 12397B
Internal method
Table 6. Specifications
Explanation Of Test Levels
I 100% production tested at +25°C
II 100% production tested at +25°C, and sample tested at specified temperatures (AC testing done on sample)
III Sample tested only
IV Parameter is guaranteed by design and/or characterization testing
V Parameter is a typical value only
VI 100% production tested at temperature extremes
D 100% probe tested on wafer at Tamb = +25°C
Parameter
Resolution
Size
Yield: number of bad pixels
Equivalent resistance on TPP pin
Symbol
Test Level
IV
IV
I
I
Min
23
Typ
50
8x280
30
Max
15
47
Unit
micron
pixel
bad pixels
1962C01/02
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FCD4B14CC arduino
FCD4B14
Figure 6. FCD4B14 Block Diagram
PCLK
RST
clock
reset
column selection
line sel
1 dummy column
1
8 lines of 280 columns of pixels
amp
8 2240 8
chip temperature
stabilization
chip
temperature
sensor
ACKN
even
4-bit
ADC
4
4-bit
odd ADC 4
8
latches
De0-3
Do0-3
analog
output
output
enable
TPP
TPE
AVE AVO
OE
Functional Description
The circuit is divided into two main sections: sensor and data conversion. One particular
column among 280+1 is selected in the sensor array (1), then each pixel of the selected
column sends its electrical information to amplifiers (2) (one per line), then two lines at a
time are selected (odd and even) so that two particular pixels send their information to
the input of two 4-bit Analog-to-Digital Converters (3), so 2 pixels can be read for each
clock pulse (4).
Figure 7. Functional Description
1 2 34
column selection
line sel
8 lines of 280 columns of pixels
1 dummy column
amp
8
chip
temperature
sensor
even
4-bit
ADC
4
4-bit
odd ADC 4
8
latches
De0-3
Do0-3
Sensor
Each pixel is a sensor in itself. The sensor detects a temperature differential between
the beginning of acquisition and the reading of information: this is the integration time.
The integration time begins with a reset of the pixel to a predefined initial state. Note that
the integration time reset has nothing to do with the reset of the digital section.
Then, at a rate depending on the sensitivity of the pyroelectric layer, on the temperature
variation between the reset and the end of the integration time, and on the duration of
the integration time, electrical charges are generated at the pixel level.
1962C01/02
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