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PDF FC809 Data sheet ( Hoja de datos )
| Número de pieza | FC809 | |
| Descripción | 30V/ 70mA Rectifier | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Ordering number :EN3908A
FC809
Silicon Barrier Diode
30V, 70mA Rectifier
Applications
· General rectification applications.
· High frequency rectification (switching regulators,
converters, choppers).
Features
· Low forward voltage (VF max=0.55V) .
· Fast reverse recovery time (trr max=10ns) .
· Composite type with 2 diodes contained in the CP
package currently in use, saving the mounting
space greatly.
· The FC809 is formed with two chips, each being
equivalent to the SB007-03CP, placed in one pack-
age.
Package Dimensions
unit:mm
1236A
[FC809]
1:Cathode
2:Cathode
3:Anode
4:No Contact
5:Anode
Specifications
Absolute Maximum Ratings at Ta = 25˚C (Value per element)
SANYO:CP5
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
50Hz sine wave, 1 cycle
Electrical Characteristics at Ta = 25˚C (Value per element)
Ratings
30
35
70
2
–55 to +125
–55 to +125
Unit
V
V
mA
A
˚C
˚C
.Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interteminal Capacitance
Reverse Recovery Time
Thermal Resistance
· Marking:809
trr Test Circuit
Symbol
Conditions
VR
VF
IR
C
trr
Rth (j-a)
IR=20µA
IF=70mA
VR=15V
VR=10V, f=1MHz
IF=IR=10mA, See specified Test Circuit
Ratings
min typ
30
3.0
560
max
0.55
5.0
10
Unit
V
V
µA
pF
ns
˚C/W
Electrical Connection
1:Cathode
2:Cathode
3:Anode
4:No
Contact
5:Anode
(Top view)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22898HA (KT)/90696GI/42294YH (KOTO) 8-7187 No.3908-1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet FC809.PDF ] | |
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